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Wafer pedestal tilt mechanism and cooling system

A wafer and wafer pad technology, applied in the field of ion implantation devices, can solve problems such as unbalanced load of coolant

Inactive Publication Date: 2005-02-02
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, this condition can occur when all supports cannot move into position at the same time, causing an unbalanced load on the coolant

Method used

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  • Wafer pedestal tilt mechanism and cooling system
  • Wafer pedestal tilt mechanism and cooling system
  • Wafer pedestal tilt mechanism and cooling system

Examples

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Embodiment Construction

[0016] See attached picture below, figure 1 Ion implantation apparatus is shown generally at 10 and includes an input 12, a beamline assembly 14, and end fittings 16. Typically, an ion beam is output by an input 12 , and the beamline assembly 14 adjusts the focus, ion species and energy level of the ion beam and directs it toward a wafer W placed on an end unit 16 .

[0017] Input 12 includes an ion source 18 having a chamber into which dopant gas from gas box 20 is injected. Energy is imparted to the ionizable dopant gas to generate positive ions in the ion source chamber. An extraction electrode 22 , powered by a high voltage power supply 24 , extracts an ion beam 26 of positive ions from the ion source chamber and accelerates the extracted ions toward a mass analysis magnet 28 . The mass analysis magnet 28 functions to pass ions having the appropriate charge-to-mass ratio to the beamline assembly 14 . Evacuation of ion beam channel 29 provided by mass analyzer magnet 28 ...

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PUM

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Abstract

The invention provides a wafer pad assembly for use in an ion implanter for mounting and cooling a wafer. The wafer pad assembly comprises a wafer support pad having an upper surface for mounting the wafer and a lower surface. The lower surface of the wafer support pad is connected to a coolant passage having an inlet section and an outlet section arranged in an opposed configuration, wherein said inlet section is counterbalanced by said outlet section. The lower surface is connected to a frame having an outer curved surface in mating engagement with a complementary shaped bearing surface of a housing wherein said wafer can be tilted or rotated about an axis.

Description

technical field [0001] The present invention generally relates to ion implantation apparatus for processing semiconductor wafers, and more particularly, the present invention relates to wafer support pedestals and wafer cooling systems for ion implantation apparatus. Background technique [0002] Ion implantation devices are used to introduce conductivity-altering impurities into semiconductor wafers. To achieve this, the desired impurity material is ionized by an ion source and then accelerated to form an ion beam with a predetermined energy. The ion beam is then directed at the semiconductor wafer so that ions in the ion beam penetrate the semiconductor material and become embedded within the crystal lattice, thereby forming regions of desired conductivity. [0003] In semiconductor wafer processing, there are several important factors to consider in order to achieve an efficient ion implantation device. An important factor is throughput, or the number of wafers process...

Claims

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Application Information

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IPC IPC(8): H01J37/20H01J37/317H01L21/00H01L21/265
CPCH01L2924/0002H01L21/67109H01J37/3171H01J2237/20207H01J2237/2001H01L2924/00H01L21/265
Inventor A·维德R·费斯
Owner AXCELIS TECHNOLOGIES
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