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Shower head, device and method for manufacturing thin films

A technology for manufacturing devices and nozzles, used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as turbulence, convection, and thermal convection without special consideration, ineffective removal, and particle generation. Effects of suppressing decomposition and precipitation, improving productivity and mass productivity, and extending maintenance intervals

Active Publication Date: 2005-02-23
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The above-mentioned conventional devices do not take special consideration of turbulent flow, convection, and heat convection with respect to the gas flow, and there are situations where film peeling and particle generation are likely to occur during film formation.
[0011] As mentioned above, when cleaning the film formed on the inner wall of the film-forming tank, etc., in the case that the film cannot be effectively removed in the reaction treatment generated by plasma or chemical gas, the worker must use nitric acid or the like. Chemicals for direct removal are dangerous
Or, as another cleaning method, the film formation tank is removed and sent to a cleaning manufacturer, so there may be a large-scale work of cleaning
Therefore, it can be said that such a thin film manufacturing device is not practical as a mass production device on the premise that it can be used safely and effectively.

Method used

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  • Shower head, device and method for manufacturing thin films
  • Shower head, device and method for manufacturing thin films
  • Shower head, device and method for manufacturing thin films

Examples

Experimental program
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Embodiment

[0070] In the following, standard film-forming conditions for producing a PZT film by the MOCVD method are mentioned, and film formation was carried out under these conditions using the apparatus of the present invention.

[0071] (raw material) (concentration) (set flow rate)

[0072] Pb(dpm) 2 / THF 0.3mol / L 1.16mL / min

[0073] Zr(dmhd) 4 / THF 0.3mol / L 0.57mL / min

[0074] Ti(iPrO) 2 (dpm) 2 / THF 0.3mol / L 0.65mL / min

[0075] N 2 (carrier gas) 500sccm

[0076] (reactive gas)

[0077] o 2 2500 sccm

[0078] (inert gas around gas head)

[0079] N 2 1500 sccm

[0080] Film forming pressure: through the pressure regulating valve, it has been adjusted to be constant at 5 Torr.

[0081] Substrate temperature: 580°C

[0082] Spray plate-substrate distance: 30mm

[0083] Using the thin film manufacturing apparatus shown in FIG. 1, on an 8-inch electrode substrate mounted on a substrate stage 4, the ...

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Abstract

The invention provides a thin film production apparatus and a production method excellent in productivity and mass-productivity which enable continuous film deposition to stably be performed over a long period causing the reduced number of particles while providing a shower head in which temperature can be controlled in accordance with film deposition conditions and reproducing satisfactory film deposition distribution, compositional distribution and film deposition rate. A shower head structure is incorporated into the upper cover of a film deposition tank, and the upper cover is provided with a heat exchanging means to control the temperature of the upper cover, so that heat exchange is performed at the contact face between a shower plate composing the surface of the shower head and the upper cover, and the temperature of the shower head is made controllable in accordance with film deposition conditions. In the thin film production apparatus, the film deposition tank is provided with the shower head, and a thin film is produced using the apparatus.

Description

technical field [0001] The present invention relates to a spray head, a thin film manufacturing device and a manufacturing method. Background technique [0002] In the case of conventional thin film production equipment, in the case of a device with a substrate table lifting mechanism, due to the gap of the lifting mechanism, the substrate table is pulled into the vacuum when it is in vacuum, and the exhaust gas of the concentric circles is adjusted when it is in the atmosphere. The balance of the port (exhaust path) is broken. Therefore, in order to achieve a uniform film thickness distribution on the substrate, if the film thickness distribution is within ±3%, an exhaust port of 5 mm or more on one side, and if it is within ±2%, an exhaust port of 10 mm or more is necessary (for example, refer to Patent Document 1.). In addition, in an apparatus having this substrate stage elevating mechanism, in order to raise the substrate stage from the substrate transfer position to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20C23C16/40C23C16/44C23C16/455H01L21/205
CPCC23C16/4557C23C16/45565C23C16/4411C23C16/45572C23C16/40H01L21/20
Inventor 山田贵一增田健梶沼雅彦西冈浩植松正纪邹红罡
Owner ULVAC INC
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