Shower head, device and method for manufacturing thin films
A technology for manufacturing devices and nozzles, used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as turbulence, convection, and thermal convection without special consideration, ineffective removal, and particle generation. Effects of suppressing decomposition and precipitation, improving productivity and mass productivity, and extending maintenance intervals
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[0070] In the following, standard film-forming conditions for producing a PZT film by the MOCVD method are mentioned, and film formation was carried out under these conditions using the apparatus of the present invention.
[0071] (raw material) (concentration) (set flow rate)
[0072] Pb(dpm) 2 / THF 0.3mol / L 1.16mL / min
[0073] Zr(dmhd) 4 / THF 0.3mol / L 0.57mL / min
[0074] Ti(iPrO) 2 (dpm) 2 / THF 0.3mol / L 0.65mL / min
[0075] N 2 (carrier gas) 500sccm
[0076] (reactive gas)
[0077] o 2 2500 sccm
[0078] (inert gas around gas head)
[0079] N 2 1500 sccm
[0080] Film forming pressure: through the pressure regulating valve, it has been adjusted to be constant at 5 Torr.
[0081] Substrate temperature: 580°C
[0082] Spray plate-substrate distance: 30mm
[0083] Using the thin film manufacturing apparatus shown in FIG. 1, on an 8-inch electrode substrate mounted on a substrate stage 4, the ...
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