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Electroluminescent display device and its producing method

An electro-luminescence and display device technology is applied to the top-emitting electro-luminescence display device and its manufacturing field, and can solve the problems of shortening the life of the electro-luminescence display device and increasing power consumption.

Active Publication Date: 2005-03-02
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to maintain the brightness of the panel, the power consumption will increase, which will shorten the life of the electroluminescent display device

Method used

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  • Electroluminescent display device and its producing method
  • Electroluminescent display device and its producing method
  • Electroluminescent display device and its producing method

Examples

Experimental program
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Embodiment Construction

[0017] Figure 2F A schematic cross-sectional view of a top emitting electroluminescent display device according to an embodiment of the present invention is shown. The electroluminescence display device includes: a substrate 200 having a first region 10 and a second region 20, a thin film transistor 215, an intermediate insulating layer 212, a non-transparent electrode 214, a non-transparent layer 220, an electro-excitation The optical medium layer 222 and a transparent electrode 224 . Here, the first region of the substrate 200 may be a transistor region, and the second region 20 may be a light emitting region. Furthermore, a buffer layer 202 is covered thereon. The thin film transistor 215 is disposed on the buffer layer 202 above the first region 10 of the substrate 200, which consists of a channel layer 204 having a source / drain doped region 211, a gate dielectric layer 206, a gate electrode 207, and a source electrode / drain electrode 213. An interlayer dielectric (IL...

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PUM

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Abstract

The invention discloses an electric light displaying device including a film transistor, a nontransparent electrode, a nontransparent layer, a media layer and a transparent electrode. The film transistor is arranged on the base board, and it is covered by a middle insulating layer. The nontransparent electrode and the nontransparent layers are arranged above the middle insulating layer in order; the nontransparent electrode is connected to the nontransparent transistor. The nontransparent layer has an aperture and exposes part of nontransparent electrode. The media layer is arranged on the aperture part. The transparent electrode is arranged above the nontransparent. The invention also discloses the preparing method for the device.

Description

technical field [0001] The present invention relates to a flat display device, in particular to a top emission type electro-luminescence display device (electro-luminescence device) and a manufacturing method thereof. Background technique [0002] Electroluminescent devices, such as organic light emitting diodes (OLEDs), are self-luminous devices using organic materials. Typically, an OLED includes: an anode, a cathode, and an electro-luminescence medium layer (EML) disposed between the anode and the cathode. When a potential difference is applied between the cathode and the anode, electrons and holes are respectively injected into the electroluminescence medium layer from the cathode and the anode to recombine and release energy in the form of light. [0003] figure 1 A schematic cross-sectional view of a conventional bottom emitting electroluminescent display device is shown. Please refer to figure 1 , a buffer layer 102 is formed on a substrate 100, and a thin film tr...

Claims

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Application Information

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IPC IPC(8): G09F9/30H01L51/00H05B33/00
Inventor 李世昊黄维邦李国胜张凡修
Owner AU OPTRONICS CORP