Blended ytterbium boric acid Gd yttrium oxygen calcium self-frequency doubling laser crystal

A technology of laser crystal and ytterbium-doped boric acid, which is applied in crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of short growth cycle

A technology of laser crystal and ytterbium-doped boric acid, which is applied in crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of short growth cycle

CN1609287AInactive Publication Date: 2005-04-27FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Example 1: The doping concentration is 5.0 at.% Yb grown by pulling method 3+ Ionic Yb 3+ :Gd 1-x Y x Ca 4 O(BO 3 ) 3 Self frequency doubling laser crystal.

[0017] The x value is 0.275, which will accurately weigh the CaCO according to the ratio 3 、H 3 BO 3 , Yb 2 o 3 , Y 2 o 3 、Gd 2 o 3 Mix and grind evenly. After tableting, perform solid-phase synthesis reaction at 1000°C in a muffle furnace for 18 hours, take out and mash, mix and tablet, and place in a muffle furnace at a constant temperature of 1200°C for 20 hours. Put the raw materials synthesized twice into the iridium pot, and use the pulling method in an inert gas (N 2 ) in a protective atmosphere, using (010) oriented seed crystals, the growth temperature is 1496°C, the pulling speed is 0.5mm / h, and the rotation speed is 25rmp, and high-quality Yb with a crystal size of Φ30.0mm×57.7mm is grown. 3+ Doping concentration of 5.0at.% Yb 3+ :GdYCa 4 O(BO 3 ) 3 crystals.

Embodiment 2

[0018] Example 2: The doping concentration is 20.0 at.% Yb grown by pulling method 3+ Ionic Yb 3+ :Gd 1-x Y x Ca 4 O(BO 3 ) 3 Self frequency doubling laser crystal.

[0019] The x value is 0.425, which will accurately weigh the CaCO according to the ratio 3 、H 3 BO 3 , Yb 2 o 3 , Y 2 o 3 、Gd 2 o 3Mix and grind evenly, and perform solid-phase synthesis reaction at 1050° C. for 16 hours in a muffle furnace after tableting. The synthesized samples were pressed into tablets again, and placed in a muffle furnace at a constant temperature of 1200°C for 28 hours. Using the pulling method to grow in an inert gas (Ar) protective atmosphere, using a seed crystal in the (201) direction, the growth temperature is 1510°C, the pulling speed is 1.5mm / h, and the rotation speed is 30rmp, and a Φ35.3mm×60.0mm crystal is grown. High quality Yb 3+ Doping concentration of 20.0at.% Yb 3+ :GdYCa 4 O(BO 3 ) 3 crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to artificial crystal, and is especially one kind of self-frequency doubling laser crystal material Yb3+:Gd1-xYxCa4O(BO3)3 and its preparation process. The crystal belongs to the moniclinic system, has space group Cm; has the crystal cell parameter of a=8.080 angstrom, b=16.014 angstrom, c=3.539 angstrom, beta=101.18 deg, and V=449.0 cubic angstrom; and refractive index of 1.69. The monocrystal is grown in Czochralski process at the grown temperature of 1481-1550 deg.c, pulling rate of 0.5-3 mm/hr, crystal rotation speed of 15-40 rpm. The monocrystal has high quality and large size.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
27 Apr 2005
Publication
CN1609287A