Low-noise amplifier

Abstract

The low noise amplifier includes one first transistor, one second transistor, inductor and resistors. The inductor is connected between the RF output node and the work voltage, and the RF output node has capacitor, and the capacitor and the inductor make the low noise amplifier possess resonant frequency 1.5 times higher than the operation frequency, with the capacitor being parasitic capacitor of the RF output node or common capacitor. The low noise amplifier is connected to independent earthing passage, which provides parasitic inductance via the chip soldering lines.

Description

technical field [0001] The invention provides an amplifier, in particular to a low noise amplifier. Background technique [0002] Low noise amplifiers have been used in a wide range of fields, such as radio frequency (RF) communication systems in wireless networks and mobile phones. It is a current industry trend to improve and enhance the performance and reliability of low noise amplifiers and reduce their costs. [0003] figure 1 is a schematic diagram of a conventional low noise amplifier 10, figure 1 A dotted line is used to distinguish between on-chip and off-chip. The LNA 10 includes a transistor 22 having a drain connected to an operating voltage Vdd via a first inductor 26 . An RF input signal (RF input signal) is connected to the gate of the transistor 22 through the second inductor 28 , and the output signal of the LNA 10 is output through the drain of the transistor 22 . The gate of transistor 22 is connected to a current mirror circuit 24 which provides a bi...

AI Technical Summary

Problems solved by technology

The disadvantage is that the resistance will cause corresponding power loss, instability of the drain voltage of the transistor 22, and increase of noise in the DC mode.

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