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Semiconductor device manufacturing method

A manufacturing method and semiconductor technology, applied to the field of forming gate electrodes or wiring on semiconductor wafers through gate insulating films or insulating films, can solve problems such as low reliability and reduced yield, and achieve the goal of suppressing the amount of finished products or The effect of reduced reliability

Inactive Publication Date: 2005-09-28
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The generation of this powder is a major problem in semiconductor manufacturing that reduces yield or reduces reliability

Method used

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  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method

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Embodiment Construction

[0028] second reference figure 1 ˜ FIG. 4 illustrate the manufacturing method of the semiconductor device of the present invention. In addition, due to the structure itself of the semiconductor device and Figure 5 The conventional device shown is the same, so the description is omitted, and the manufacturing process for preventing powder generation is explained in detail.

[0029] figure 1 It is a cross-sectional view of a slope portion of a semiconductor wafer 1 for explaining the characteristics of the present invention of the first embodiment, and is formed on the semiconductor chip 1 via an unillustrated gate insulating film or an insulating film for forming a gate electrode or a distribution layer. After forming a conductive film (for example, a polysilicon film or a tungsten silicide film, or a laminated film thereof), isotropic etching is performed to form a gate electrode or wiring (not shown). At this time, since the conductive film 2 is isotropically etched on t...

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Abstract

The present invention provided a method of forming a gate electrode suppressing re-attachment in the subsequent process, by removing etching residues at the bevel portion of a semiconductor wafer. A manufacturing method of a semiconductor device has a process of forming an insulating film on a semiconductor wafer 1; a process of forming a conductive film on the insulating film; and a process of forming an electrode or wiring and performing isotropic etching on the conductive film.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming a gate electrode or wiring on a semiconductor wafer via a gate insulating film or an insulating film. Background technique [0002] In a general manufacturing method of a semiconductor device, the gate electrode 52 is formed by repeatedly etching the conductive film for forming a gate electrode when configuring the following semiconductor device. Furthermore, anisotropic etching is performed in its patterning process, and the semiconductor device is formed on the Figure 5 A gate electrode 52 is formed on the semiconductor wafer 50 shown, and source and drain regions 53 , 54 are formed on the surface layer of the wafer 50 adjacent to the gate electrode 52 . [0003] However, in this anisotropic etching, the gate electrode 52 remains, and the gate electrode-forming conductive film on the surface side of the semiconductor wafer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/28H01L21/31H01L21/3205H01L21/321H01L21/3213H01L21/768H01L21/78H01L29/04
CPCH01L21/02087H01L21/32137H01L21/7684H01L21/32115
Inventor 田中直明塚田雄二渡辺雄一
Owner SANYO ELECTRIC CO LTD