Inspector for surface deficiency of silicon sheet with scattered light intensity doubling system

Abstract

A detector of detect on silicon wafer surface is featured as forming multiplier system of scattering light intensity by the first and the second spherical mirrors with a light trap and on a light axis regulating frame, presenting light axis of defect scattering light collection system in included angle beta to normal of silicon wafer to be detected and moving detected silicon wafer in plane and in rotation by operation table to let two spherical mirrors, trap and planar reflector satisfy to object - image relation of geometrical optics.

Description

technical field [0001] The invention is related to silicon chip surface defect detection, in particular to a silicon chip surface defect detector with a scattered light intensity multiplication system, which uses the Mie scattering principle to detect real-time defects on the silicon chip surface in integrated circuit manufacturing. Background technique [0002] In recent years, laser scanning scattering detection technology for various surface defects has been developed rapidly. When a focused laser beam is scanned across the surface of a silicon wafer, defects on the surface generate defect-scattered light. The scattered light of these defects contains abundant information such as the shape, type and position of the defects. The light scattered by these defects is collected by photodetectors, analyzed and processed, and signals such as the shape and position of the defects are finally obtained. [0003] Existing silicon wafer surface defect detection systems such as fig...

AI Technical Summary

Problems solved by technology

In addition, the theory shows that the scattering signal on the reflected light side of the fine particle is much stronger than the incident light side, such as image 3 As shown in , while in the prior art, the two focuses are incident from both sides, so the defect scattering signal is not concentrated enough, which is not conducive to the collection of scattered light

and in figure 1 The condenser lens group in the device is located in the normal direction of the surface of the silicon wafer (5) to be measured, and is easily affected by the surface scattering signal in the normal direction

Images