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Group iii-nitride-based compound semiconductor device

A technology of nitrides and compounds, applied in the field of Group III nitride-based compound semiconductor devices, which can solve problems such as increased resistance, high resistivity, and large thickness

Active Publication Date: 2006-03-15
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this layer has a high resistivity and a large thickness, which causes its resistance to increase

Method used

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  • Group iii-nitride-based compound semiconductor device
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Embodiment Construction

[0034] Preferred embodiments of the present invention will be described below. "Acceptor impurities unintentionally introduced into a layer during manufacturing" refers to acceptor impurities mixed therein for some technical reasons although the acceptor impurities are not intended to be mixed when the layer is formed.

[0035] Technical reasons include migration from adjacent layers, contamination due to incomplete conversion of raw materials introduced at transition moments when forming different layers (so-called memory effect), and traces due to, for example, insufficient cleaning of manufacturing equipment. "Continuous" pollution. In the following embodiments, it is considered that acceptor impurities are not intentionally introduced into the intermediate layer, but spontaneously mixed therein during the following manufacturing process.

[0036] The donor impurity is added based on the measured value of the concentration distribution of the acceptor impurity incorporated...

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Abstract

In a group III-nitride-based compound semiconductor device 100, an intermediate layer 108 is provided between a p-AlGaN layer 107 and a p-GaN layer 109, to each of which an acceptor impurity is added. On this occasion, the intermediate layer 108 is doped with a donor impurity in a concentration, by which holes generated by an acceptor impurity introduced into the intermediate layer 108 during the formation of the p-AlGaN layer 107 are substantially compensated. As a result, the conductivity of the intermediate layer 108 becomes extremely low, and therefore the electrostatic withstand voltage of the group III-nitride-based compound semiconductor device 100 improves significantly.

Description

[0001] This application is based on Japanese Patent Application No. 2003-322541, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a group III nitride-based compound semiconductor device, and more particularly, to a group III nitride-based compound semiconductor device having a high electrostatic withstand voltage. Background technique [0003] Group III nitride-based compound semiconductor devices are generally used as light-emitting devices, such as light-emitting devices in green, blue, and ultraviolet regions. However, properties of Group III nitride-based compound semiconductor devices other than luminous intensity still leave room for improvement. In particular, its electrostatic withstand voltage is still lower than that of gallium-arsenic or indium-phosphorus-based light-emitting devices so far, so the electrostatic withstand voltage needs to be greatly improved. [0004] Japanese Patent Appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/10H01L33/32H01L33/40
CPCH01L33/32H01L33/14H01L33/02
Inventor 泷哲也
Owner TOYODA GOSEI CO LTD