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A method of performing resist process calibration and optimisation diffractive optical element (DOE)

A resist and process technology, which is applied in the field of resist process calibration/optimization and DOE optimization, can solve expensive and time-consuming problems, and achieve the effect of eliminating demand and saving costs

Inactive Publication Date: 2006-04-12
ASML MASKTOOLS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, this is done through the costly and time-consuming trial-and-error process described above

Method used

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  • A method of performing resist process calibration and optimisation diffractive optical element (DOE)
  • A method of performing resist process calibration and optimisation diffractive optical element (DOE)
  • A method of performing resist process calibration and optimisation diffractive optical element (DOE)

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Embodiment Construction

[0029] figure 2 An exemplary flowchart illustrating the method of the present invention. As explained in detail below, the method of the present invention allows simultaneous optimization of the resist process and DOE to provide OPE matching so that different lithography systems (including scanners) can be used to image the same pattern without having to create Scanner readjustment or recalibration process.

[0030] The first stage of the process is to determine the resist model, which quantifies the performance of the resist. Any known resist models such as Brunner-Fergusson, Lumped Parameter models, etc. can be used.

[0031] More specifically, refer to figure 2 , which requires (step 12): identifying the target pattern to be imaged; selecting a designated lithographic system (i.e., scanner 1) to initially image the target pattern; and determining the process to be utilized to image the target pattern, which includes determining the The DOE element, NA, σ of the best i...

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Abstract

A method of optimising a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimising performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimising the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimises the imaging of the target pattern.

Description

technical field [0001] The technical field of the invention relates generally to methods and program products for performing resist process calibration and optimization and diffractive optical element (DOE) optimization to allow matching of optical proximity effects (OPE) between different lithographic systems. ). Background technique [0002] Lithographic projection apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the mask contains a circuit pattern corresponding to the individual layers of the IC that can be imaged on a target portion of the substrate (silicon wafer) to which a layer of radiation-sensitive material (resist) has been applied (e.g. including one or more cores). Typically, a single wafer will contain an entire grid of adjacent target portions irradiated consecutively by the projection system. In one type of lithographic projection apparatus, each target portion is irradiated by exposing the entire mask patt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G06F17/50
CPCG03F7/70108G03F7/70525G03F7/705G03F7/70458
Inventor S·卜克J·F·陈A·利布亨
Owner ASML MASKTOOLS BV