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Method for forming isolation film in semiconductor device

一种半导体、隔离膜的技术，应用在半导体/固态器件制造、电气元件、电路等方向，能够解决降低器件特性等问题

Inactive Publication Date: 2006-05-03
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the F ions of the FSG film degrade the device characteristics

Method used

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  • Method for forming isolation film in semiconductor device
  • Method for forming isolation film in semiconductor device
  • Method for forming isolation film in semiconductor device

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Embodiment Construction

[0014] Now, preferred embodiments according to the present invention will be described with reference to the accompanying drawings. Since the preferred embodiments are provided so that those skilled in the art can understand the present invention, these preferred embodiments can be modified in various ways, and the scope of the present invention is not limited to the preferred embodiments described later. Also, if it is described that a film is "on" another film or a semiconductor substrate, the film may directly contact the other film or the semiconductor substrate. Alternatively, a third film may be interposed between the film and the other film or the semiconductor substrate. Also, in the drawings, the thickness and size of each layer are exaggerated for convenience of description and clarity. The same reference numerals are used for the same or similar parts.

[0015] Figure 1A and 1B is a graph showing the SIMS profile of the F ion concentration in the separator forme...

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Abstract

The present invention relates to a method of forming an isolation film in a semiconductor device. According to the present invention, the method includes the steps of: forming a trench in the semiconductor substrate; forming a first high-density plasma oxide film in the formed trench; performing an etch-back process using a mixed gas of C2F6 gas and oxygen, to form a first high density plasma oxide film having upstanding sidewalls on the resulting entire surface formed with the first high density plasma oxide film; Two high-density plasma oxide films. Since the diffusion of fluorine ions in the FSG film formed on the first high-density plasma oxide film is minimized, device characteristics can be improved.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming an isolation film in a semiconductor device. Background technique [0002] Recently, due to higher integration and higher density of semiconductor devices, technologies capable of improving gap-fill characteristics of isolation films have become increasingly important. [0003] In general, a general method for forming an isolation film in a semiconductor device includes: forming a first insulating film in a trench; performing an etch-back process; and then forming a second insulating film to gap-fill the trench. [0004] However, if F-containing ions such as C 2 f 6 The etch-back process is performed with a process gas of the gas, and a FSG film is formed on the first high-density plasma (HDP) oxide film. F ions in the FSG film diffuse into the interface between the isolation film and the element while undergoing subsequ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/76H01L21/31H01L21/311H01L21/316H01L21/762
CPCH01L21/02164H01L21/02274H01L21/31116H01L21/76232H01L21/76H01L21/31612
Inventor 柳春根
Owner SK HYNIX INC