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Thin and small outer shape package combined by metal oxide semiconductor field effect transistor and schottky diode

一种肖特基二极管、瘦小的技术，应用在半导体器件、半导体/固态器件零部件、电固体器件等方向，能够解决增加电源转换器设计复杂程度、电源转换器效率低等问题

Inactive Publication Date: 2006-06-07
NIXI SEMICON TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The longer the current path, the less efficient the power converter
It also increases the design complexity of the power converter

Method used

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  • Thin and small outer shape package combined by metal oxide semiconductor field effect transistor and schottky diode
  • Thin and small outer shape package combined by metal oxide semiconductor field effect transistor and schottky diode
  • Thin and small outer shape package combined by metal oxide semiconductor field effect transistor and schottky diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] based on the following Figure 4 and Figure 5 , taking the 6-pin thin and small outline package combined with MOSFET and Schottky diode as an example to illustrate a preferred implementation mode of the present invention.

[0017] The 6-pin thin and small outline package combining MOSFET and Schottky diode provided by the present invention includes a lead frame 10, such as Figure 4 As shown, it is a schematic structural view of the 6-pin thin and small outline package lead frame 10 provided by the present invention; it includes that the second lead 2 is the S pole of the MOSFET; the third lead 3 is the G pole of the MOSFET, and the fourth lead 4 is the D1 of the MOSFET pole, the fifth lead 5 is vacant or the D2 pole of the MOSFET (the fifth lead can also be omitted depending on different working occasions); the fourth lead 4 is the D1 pole of the MOSFET and the MOSFET (such as Figure 6 The first carrier stage 11 shown in 20) is connected, and the fourth lead 4 is t...

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PUM

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Abstract

This invention provides a small sized overall package combining MOSFET and Schottky diode including pole S, pole G and pole D of MOSFET, K and A poles of the Schottky diode, in which, the D pole of MOSFET and A of the Schottky diode are at the same side, a lead frame is also included containing a first lead as the K pole of the diode connected with a second loading stand of the diode, a fourth lead as the D pole of MOSFET connected with the first loading stand of the MOSFET, the D pole of which and the K pole of the diode are at the opposite sides, which reduces the external output structure and shortens the current path to increase the efficiency of power supply.

Description

technical field [0001] The invention relates to a thin and small outline package, in particular to a thin and small outline package (TSOP, Thin Small Outline Package) in which a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a Schottky Diode (Shottky Diode) are combined. Background technique [0002] DC-DC power converters ( figure 1 ) Applied to portable electronic products is becoming more and more important. In the prior art, the combination package of the thin and small outline metal oxide semiconductor field effect transistor 20' (MOSFET) and the Schottky diode 30' (Shottky Diode) uses a double-chip lead frame 10', such as figure 2 As shown, the first lead 1' is the A pole of the Schottky diode 30', which is in a T-shaped structure; the second lead 2' is the MOSFET S pole, which is in an I-shaped structure; the third lead 3' is the MOSFET G pole, It has a T-shaped structure; the fourth lead 4' is the MOSFET D1 pole, which is connected to the first loa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L23/495
CPCH01L23/49562H01L23/49575H01L25/165H01L2924/13091H01L2924/0002H01L2924/00
Inventor 施震宇汪利民石磊
Owner NIXI SEMICON TECH (SHANGHAI) CO LTD