Local interconnect structure and method for a cmos image sensor

A technology of local interconnection and light sensor, applied in the direction of semiconductor/solid-state device components, semiconductor devices, electric solid-state devices, etc., can solve the problems of low cost, high performance, and difficulty in laying and connecting signal lines and power lines. , to improve the wiring accuracy, simplify the wiring process, improve the optical crosstalk and the ability of the microscope head

Active Publication Date: 2006-06-14
OMNIVISION TECH INC
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Problems solved by technology

In addition, the speed of obtaining and reading data is also an issue
Smaller, more complex pixels make it difficult to route all the signal and power lines to and from the pixel array while maintaining low cost and high performance
To further complicate matters, the "stack height" of the image sensor is also a factor

Method used

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  • Local interconnect structure and method for a cmos image sensor
  • Local interconnect structure and method for a cmos image sensor
  • Local interconnect structure and method for a cmos image sensor

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Embodiment Construction

[0021] In the following description, many specific details are provided for a thorough understanding of the embodiments of the present invention. However, those skilled in the art may realize that the present invention can still be implemented without one or more of these specific details, or the present invention can still be implemented without using other methods, elements, etc. In addition, in order to clearly describe various embodiments of the present invention, well-known structures and operations are not shown or described in detail.

[0022] In the specification of the present invention, reference to "an embodiment" or "an embodiment" means that the specific feature, structure or characteristic described in the embodiment is included in at least one embodiment of the present invention. Therefore, the appearances of "in one embodiment" or "in a certain embodiment" in various places in the specification do not necessarily mean that all belong to the same embodiment; moreove...

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Abstract

The invention provides a local interconnection structure of a CMOS image sensor and a forming method thereof. The local interconnection structure of a CMOS image sensor consistent with the conventional CMOS image sensor processing flow is formed by adopting a self-positioning silicide processing technology. Wherein, an oxide layer is deposited on the pixel array of the image sensor; part of the oxide layer is removed and a metal layer is deposited; the metal layer is annealed to form a metal silicide. At the same time, a protective insulating layer can be further deposited.

Description

Technical field [0001] The present invention relates to an image sensor, and more specifically, the present invention relates to an image sensor including a local interconnect structure. Background technique [0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, portable phones, security cameras, medical equipment, automobiles, and other applications. The technology for manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors, continues to develop rapidly. For example, the requirements for high resolution and low energy consumption have promoted further miniaturization and integration of image sensors. Therefore, the number of pixels in the pixel array of the image sensor has increased significantly. [0003] For example, a 5-megapixel CMOS sensor is currently being manufactured. This large pixel array means that a large amount of data can be collected and read. In addition, the speed of obtaining an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/768H01L21/822H01L23/522
CPCH01L21/76895H01L27/14601H01L27/14643H01L27/14636H01L27/14689
Inventor 霍华德·E·罗德斯
Owner OMNIVISION TECH INC
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