Local interconnect structure and method for a cmos image sensor

A technology of local interconnection and light sensor, applied in the direction of semiconductor/solid-state device components, semiconductor devices, electric solid-state devices, etc., can solve the problems of low cost, high performance, and difficulty in laying and connecting signal lines and power lines. , to improve the wiring accuracy, simplify the wiring process, improve the optical crosstalk and the ability of the microscope head
CN1787223AActive Publication Date: 2006-06-14OMNIVISION TECH INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
OMNIVISION TECH INC
Publication Date
2006-06-14

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Abstract

The invention provides a local interconnection structure of a CMOS image sensor and a forming method thereof. The local interconnection structure of a CMOS image sensor consistent with the conventional CMOS image sensor processing flow is formed by adopting a self-positioning silicide processing technology. Wherein, an oxide layer is deposited on the pixel array of the image sensor; part of the oxide layer is removed and a metal layer is deposited; the metal layer is annealed to form a metal silicide. At the same time, a protective insulating layer can be further deposited.
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Description

Technical field

[0001] The present invention relates to an image sensor, and more specifically, the present invention relates to an image sensor including a local interconnect structure. Background technique

[0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, portable phones, security cameras, medical equipment, automobiles, and other applications. The technology for manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors, continues to develop rapidly. For example, the requirements for high resolution and low energy consumption have promoted further miniaturization and integration of image sensors. Therefore, the number of pixels in the pixel array of the image sensor has increased significantly.

[0003] For example, a 5-megapixel CMOS sensor is currently being manufactured. This large pixel array means that a large amount of data can be collected and read. In addition, the speed of obtaining an...

Claims

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