The invention relates to a
memory cell, a memory structure and a preparation method thereof. The storage unit comprises a write
transistor, a first
transistor and a second
transistor, the write transistor comprises a write word line, a write
gate dielectric layer and a write channel layer, the write word line extends in a first direction, the write
gate dielectric layer is located on the side wall of the write word line, and the write channel layer is located on the side wall of the write
gate dielectric layer; a shared lead extending in a third direction; the first
electrode and the shared wire are arranged in the first direction, and the first
electrode and the shared wire are located on the same side of the write-in channel layer; the reading transistor comprises a reading gate
dielectric layer, a reading channel layer and a reading
bit line, the reading gate
dielectric layer is located between the shared wire and the first
electrode and extends to the side wall of the first electrode, the reading channel layer comprises a reading channel part, the reading channel part is located on the side wall of the reading gate
dielectric layer, one end of the reading channel part is connected with the shared wire, and the other end of the reading channel part is connected with the first electrode. And the other end is connected with the reading
bit line. According to the embodiment of the invention, the storage density can be effectively improved.