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Dirty block recovery method for flash memory device

A recovery method and technology of flash memory, applied in information storage, static memory, read-only memory, etc., can solve the problem of low overall utilization efficiency of flash memory devices, and achieve the effect of reducing the number of erasing times, balancing the lifespan, and evenly erasing

Active Publication Date: 2006-08-09
KONKA GROUP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to inefficient overall utilization of the flash memory device

Method used

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  • Dirty block recovery method for flash memory device
  • Dirty block recovery method for flash memory device
  • Dirty block recovery method for flash memory device

Examples

Experimental program
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Embodiment Construction

[0031] The flash memory device comprises MCU (microcontroller), storage array, bottom drive module, flash memory storage management module and file system, as shown in Figure 1, file system receives external (such as external application program) read, write, erase request, The flash memory storage management module and the underlying driver module reach the storage array, and the MCU performs read, write, and erase operations on the storage array according to the output signals set by the underlying driver module. The flash memory storage management module is responsible for balancing the number of erasing and writing between blocks and managing bad blocks. It performs various operations on the storage array through the underlying driver module. The storage array includes multiple blocks, and each block is composed of multiple sectors, sometimes called "pages", and each sector is divided into a storage area and a redundant area, as shown in FIG. 2 . There is a specific area i...

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Abstract

The method includes forced reclaiming step carried out in time of writing sector, and conditional reclaiming step carried out after time of deleting sector. The forced reclaiming step reclaims blocks with most dirty sectors. Conditional reclaiming step is divided into two situations: for reclaiming blocks with number of dirty sectors being reached to a threshold value of dirty sectors; for reclaiming blocks with minimal erasure number. Advantages are: as far as possible to reduce number for erasing blocks, even erasure to make all physical blocks have even service life.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor storage, in particular to a dirty block recovery method of a flash memory device. 【Background technique】 [0002] Flash memory (Flash Memory) has the advantages of high density and good access speed, and is the most widely used storage device in the embedded field, belonging to the EEPROM (Electrically Erasable Programmable Read-Only Memory) type. There are two commonly used flash media, nand flash and nor flash, both of which divide the storage space into erase blocks of a specific size, such as 16KB, 64KB, and so on. They are similar to ordinary SRAM memory in terms of reading, and can generally achieve completely random reading. The biggest difference lies in the writing operation. The writing operation of the Flash memory needs to go through two operation processes of "erase-write". If you want to write to a certain unit, you must first perform an erase operation on the sector (Sector) or bloc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/10G11C16/14
Inventor 张建文
Owner KONKA GROUP
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