Semiconductor device and its manufacturing method
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as inability to meet requirements, and achieve the effect of high withstand voltage
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[0047] figure 1 It is a cross-sectional view showing the structure of the semiconductor device 1 according to the first embodiment of the present invention.
[0048] The conductivity type is N + On the silicon substrate 2 constituting the drain region, a semiconductor layer 13 forming a so-called super junction structure is provided. The semiconductor layer 13 includes a conductivity type of N - Type drift layer 3 and conductivity type P - For the RESURF layer 9, the drift layer 3 and the RESURF layer 9 are arranged so that they alternate (repeatedly) in sequence on the silicon substrate 2 in parallel and laterally.
[0049] A plurality of trenches 4 having a depth that penetrates through the semiconductor layer 13 to the depth of the silicon substrate 2 are formed substantially parallel to each other. The trench 4 has an inner side wall that is substantially perpendicular to the silicon substrate 2 and is perpendicular to the figure 1 Extending in the direction of the paper su...
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