Free-standing electrostatically-doped carbon nanotube device and method for making same
A technology for carbon nanotubes and devices, which is applied in the field of forming independent electrostatic doped carbon nanotube devices, and can solve problems such as inaccuracy and weakening of performance characteristics of nanoscale electronic devices
Inactive Publication Date: 2006-09-27
GENERAL ELECTRIC CO
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Problems solved by technology
However, the chemistries for doping carbon nanotubes suffer from the general inaccuracy of the p-type and n-type regions, leading to diminished performance characteristics of nanoscale electronic devices.
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[0019] The described embodiments of the present invention provide a method and associated structure for forming electrostatically doped carbon nanotubes having precisely defined p-type and n-type regions and allowing the formation of Nanoscale electronic devices with enhanced performance characteristics such as photovoltaic diodes, power devices, photodiodes, photodetectors, light emitting diodes ("LEDs") and the like. One specific form of electrostatically doped carbon nanotube device is a freestanding electrostatically doped carbon nanotube device. More specifically, embodiments of the present invention provide the functionality to use multiple doped electrodes decoupled from multiple bias electrodes. Thus, the doping of carbon nanotubes can be precisely adjusted by varying the bias voltage of each of the plurality of bias electrodes. Advantageously, the methods and associated structures are capable of providing carbon nanotubes having P-N junctions, P-I-P junctions, P-I-N ...
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Abstract
A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.
Description
[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of and claims priority to U.S. Patent Application Serial No. 10 / 683,895 filed October 10, 2003, the entire contents of which are hereby incorporated by reference . technical field [0003] The present invention mainly relates to the field of nanotechnology. More specifically, the present invention relates to a method and associated structure for forming a free-standing electrostatically doped carbon nanotube device. Background technique [0004] Carbon nanotubes have attracted a lot of attention in recent years due to their potential for use as nanoscale electronic devices such as diodes, transistors and semiconductor circuits. Structurally, carbon nanotubes resemble a hexagonal lattice of carbon rolled into a cylinder and may belong to one of two varieties, single-walled and multi-walled. Any of these species may, in whole or in part, exhibit metallic or semiconducting mat...
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IPC IPC(8): H01L51/00H10K99/00H01L21/00H01L29/12H01L29/26H01L33/18H01L33/24H01L33/34
CPCH01L33/24B82Y10/00H01L51/0512H01L51/0554H01L51/5262H01L51/0508H01L51/0048H01L51/002H01L51/5012B81C1/00142B82B3/00Y10S977/938B82Y40/00H01L33/18H01L51/055H01L33/34H01L29/861H01L51/0545G11C13/025H01L29/0665H01L51/0558B82Y20/00H01L29/0673Y10S977/742B82Y30/00Y02E10/549H10K71/30H10K85/221H10K10/46H10K10/462H10K10/481H10K10/482H10K10/484H10K10/466H10K50/11H10K50/85
Inventor J·U·李
Owner GENERAL ELECTRIC CO