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Polymer remover

A composition and compound technology, applied in the direction of detergent composition solvent, detergent compounding agent, detergent composition, etc., can solve the problems of flammability, toxicity, volatility, high cost of odor, corrosion of low-k dielectric materials, Problems such as the incompatibility of the release composition with the film

Inactive Publication Date: 2006-10-04
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The composition disclosed in this patent cannot effectively remove the residue after plasma treatment under all conditions, and has one or more of the following disadvantages: treatment bath life (bath life) is short, unstable to pH, sensitive to plasma treatment Poor removal of residues after
[0005] Additionally, other known stripping compositions for post-plasma treatment residue removal applications suffer from a number of disadvantages, including undesired flammability, toxicity, volatility, odor, need for elevated temperatures, e.g., up to 100° C. Use at high temperatures, high costs due to handling of specified materials
A particular problem with advanced next-generation semiconductor devices is that known stripping compositions are not compatible with the various films in these devices, that is, these known stripping compositions cause films, Corrosion of especially copper, and low-k dielectric materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] sample

Embodiment 2

[0045] sample

[0046] From these results it is clear that the composition of the present invention is effective in removing post-plasma treatment residues. A lower etch rate of the cap layer indicates less undercutting of the underlying layer.

Embodiment 3

[0048] A silicon wafer (approximately 2.5 x 2.5 cm) containing a thermally grown copper oxide film (approximately 380 A) was cleaned using the samples described in the table below. At room temperature, the wafers were immersed in each sample in a beaker for the time indicated in the table below. After immersion for the appropriate time, each sample was removed from the beaker, rinsed with deionized water, and dried. The organic solvent used in the comparative sample was a 1:1 (weight ratio) mixture of PDO and DPM.

[0049] sample

[0050] From the above data it is clear that the compositions of the present invention are effective in removing metal oxides.

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PUM

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Abstract

Compositions useful for the removal of post-plasma processing polymeric residue from substrates, such as electronic devices, are provided. Also provided are methods of removing the post-plasma processing residues and methods of manufacturing integrated circuits using the compositions.

Description

technical field [0001] The present invention relates generally to the field of removal of polymeric materials from substrates. In particular, the present invention relates to compositions and methods for removing polymeric materials after plasma treatment in the manufacture of electronic devices. Background technique [0002] Many polymer-containing materials are used in the manufacture of electronic devices such as integrated circuits, disk drives, storage media devices, and the like. These polymeric materials are found in photoresists, antireflective coatings, via fill layers, etch stop layers, and the like. For example, modern techniques use positive photoresist materials to lithographically draw a pattern on a substrate so that the pattern can then be etched or otherwise formed into the substrate material. The photoresist is deposited as a film and the photoresist film is exposed to high energy radiation to form the desired pattern. The exposed areas are then dissolve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D3/20H01L21/3105H01L21/30
CPCC11D3/30H01L21/02063C11D3/2082C11D3/245C11D7/265C09K13/08G03F7/425C11D3/046C11D7/3209C11D3/33C11D3/43C11D7/10G03F7/426H01L21/02057C11D7/3245H01L21/02071C11D7/30C11D11/0047C11D3/2086F25B43/003F25B2400/16
Inventor R·L·奥格J·F·拉绍斯基
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC