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Lamb wave type high frequency device

A Lamb wave, high frequency technology, applied in the field of Lamb wave type high-frequency devices, can solve the problems of frequency band fluctuation, abnormal oscillation, frequency jump, etc., to achieve the effect of reducing the number, suppressing the excitation, and enhancing the excitation

Inactive Publication Date: 2006-11-15
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0028] Therefore, according to the prior art described above, the reflectors 140, 150 make Figure 56 Any mode shown is strongly excited, so if an oscillator is considered for use, problems such as abnormal oscillations, frequency jumps, etc. arise
Also, when used as a filter, there is a problem of generating fluctuations in the frequency band

Method used

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Examples

Experimental program
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Effect test

Embodiment approach 1

[0151] figure 1 is a perspective view showing the Lamb wave type high-frequency resonator 1 of Embodiment 1, figure 2 yes means figure 1 A cross-sectional view of the A-A section in .

[0152] exist figure 1 , figure 2 Among them, the Lamb wave type high-frequency resonator 1 is composed of an IDT electrode 30 having a pair of interdigitated electrodes 31, 32 on the surface of a piezoelectric substrate 20 made of quartz, and a pair of reflectors 40 having electrode fingers 50a, 50b. , 50 components. These reflectors 40 and 50 are provided on both sides in the traveling direction of the Lamb wave excited by the IDT electrode 30 . Hereinafter, one interdigital electrode 31 will be referred to as a first interdigital electrode 31 , and the other interdigital electrode 32 will be referred to as a second interdigital electrode 32 .

[0153] The first interdigital electrodes 31 and the second interdigital electrodes 32 of the IDT electrodes 30 are formed so as to be inter...

Embodiment approach 2

[0166] Next, a Lamb wave type high-frequency resonator according to Embodiment 2 of the present invention will be described with reference to the drawings. Embodiment 2 is the same as the aforementioned Embodiment 1 (refer to figure 1 , 2 ), the structure of the electrode fingers of the IDT electrode is different, which is characterized in that the electrode fingers of the 4 IDT electrodes are inserted alternately within the range of the wavelength λ of the Lamb wave.

[0167] Figure 6 , 7 The structure of the Lamb wave type high-frequency resonator of Embodiment 2 is shown, Figure 6 is its stereogram, Figure 7 yes means Figure 6 Sectional view of the B-B section in . exist Figure 6 , 7 Among them, the Lamb wave type high-frequency resonator 2 is composed of an IDT electrode 30 formed on the surface of a piezoelectric substrate 20 made of quartz, and reflectors 40 and 50 provided at both ends thereof. Its basic configuration is the same as that of Embodiment 1. ...

Embodiment approach 3

[0178] Next, a Lamb wave type high-frequency resonator according to Embodiment 3 of the present invention will be described with reference to the drawings. The feature of this embodiment is that an insulating film covering the upper surface of the IDT electrode 30 described in Embodiments 1 and 2 is formed, and the structures of the IDT electrode 30 and reflectors 40 and 50 may be the same as those of Embodiments 1 and 2. Structure. Here, based on Embodiment 1 (refer to figure 1 , 2 ), assign the same symbols to the same parts, and only explain the different parts.

[0179] Figure 9 , 10 The Lamb wave type high-frequency resonator 3 of Embodiment 3 is shown, Figure 9 is its stereogram, Figure 10 yes means Figure 9 Sectional view of the C-C section in . exist Figure 9 , 10 In this case, an insulating film 60 covering the entire IDT electrode 30 is formed on the surface of the IDT electrode 30 . The insulating film 60 is made of SiO 2 form.

[0180] In additio...

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Abstract

A lamb wave type high frequency device includes: an interdigital transducer (IDT) electrode having an electrode finger interdigitated therein; a pair of reflectors having an electrode finger and being disposed at both sides of a propagation direction of a lamb wave excited by the IDT electrode; and a piezoelectric substrate on a surface of which the IDT electrode and the reflectors are disposed, wherein a pitch of the electrode finger of the IDT electrode and a pitch of the electrode finger of the reflectors are different from one another.

Description

technical field [0001] The present invention relates to a Lamb wave type high-frequency device used in communication equipment and the like. Background technique [0002] Conventionally, high-frequency devices such as high-frequency resonators and filters are known. Representative examples of high-frequency resonators include surface acoustic wave elements using Rayleigh waves or SH waves, Lamb wave elements using Lamb waves that are bulk waves, and the like. Also, there are band filters using the same waves as above. [0003] For example, there is a known Rayleigh-wave surface acoustic wave device in which an IDT electrode is formed on the surface of a quartz substrate called an ST cut in the Z'-axis direction along which surface acoustic waves propagate (see, for example, Non-Patent Document 1). [0004] In addition, a surface acoustic wave element using an STW-cut quartz substrate, that is, an SH-type surface acoustic wave element propagating a transverse wave in which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145H03H9/25H10N30/20H10N30/85
Inventor 田中悟
Owner SEIKO EPSON CORP
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