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Substrate processing apparatus and substrate processing method

A technology of a substrate processing device and a substrate processing method, which is applied in the directions of gaseous chemical plating, coating, electrical components, etc., can solve the problems of being difficult to obtain and realize, and achieve the effects of uniform substrate processing and uniform processing gas volume.

Inactive Publication Date: 2006-11-22
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0026] However, generally speaking, the through hole 20 is drilled with a drill, and it is difficult to obtain the required drill that can guarantee the machining accuracy.
Therefore, it is difficult to improve the uniformity of the film thickness by controlling the diameter of the through hole 20.

Method used

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  • Substrate processing apparatus and substrate processing method
  • Substrate processing apparatus and substrate processing method
  • Substrate processing apparatus and substrate processing method

Examples

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no. 1 example

[0067] Hereinafter, the substrate processing apparatus according to the first embodiment of the present invention will be described with reference to the drawings.

[0068] figure 1 , Is a cross-sectional view schematically showing the substrate processing apparatus according to the first embodiment of the present invention used in the manufacture of semiconductor integrated circuits. To explain in more detail, it schematically shows the inside of the chemical vapor deposition apparatus 100 Sectional view of the structure. The chemical vapor deposition apparatus 100 of this embodiment and the conventional chemical vapor deposition apparatus 10 shown in FIG. 5(a) have a different shape of the gas diffusion plate of the shower head. Hereinafter, a detailed description will be given.

[0069] The chemical vapor deposition apparatus 100 has a substrate support part 102 in a reaction chamber 101 where a film is grown, and a substrate 103 to be processed is placed on the substrate supp...

no. 2 example

[0102] Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to the drawings.

[0103] Figure 4 , Is a cross-sectional view schematically showing the substrate processing apparatus according to the second embodiment of the present invention used for manufacturing semiconductor integrated circuits, and more specifically, schematically showing the internal structure of the chemical vapor deposition apparatus 200 Section view.

[0104] The chemical vapor deposition apparatus 200 has a structure in which a second shower head 204 and a second gas diffusion plate 207 are additionally provided to the chemical vapor deposition apparatus 100 of the first embodiment. Thus, in Figure 4 In the chemical vapor deposition apparatus 200, used with figure 1 The same symbols denote the same structural elements as those of the chemical vapor deposition apparatus 100 of the first embodiment, and detailed descriptions...

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Abstract

The invention discloses a substrate processing device and a substrate processing method. The substrate processing apparatus (100) has a reaction chamber (101) for processing a substrate (103) with a processing gas (106), a substrate support portion (102) provided in the reaction chamber (101) and a substrate (103) for setting the substrate (103), and the processing gas ( 106) The shower head (104) introduced into the reaction chamber (101); the shower head (104) has formed a plurality of through holes (110) for diffusing the processing gas (106) and is set as a plate facing the substrate support part (102) Shaped gas diffusion plate (107); the gas diffusion plate (107) has a central portion and an edge portion whose thickness is thinner than the central portion; among the plurality of through holes (110), the length of the through hole at the edge portion is shorter than that of the plurality of through holes ( 110) set the length of the through hole at the center. Therefore, it is possible to provide a substrate processing apparatus and a substrate processing method capable of performing uniform substrate processing on the substrate surface.

Description

Technical field [0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly to a substrate processing device and a substrate processing method capable of improving the uniformity of processing such as film formation and etching. Background technique [0002] In recent years, under the trend of increasingly high integration and low power consumption of semiconductor integrated circuit devices, the manufacturing cost of semiconductor integrated circuit devices has gradually been reduced by means of setting the diameter of the semiconductor substrate to be larger. It is considered that in order to miniaturize the element pattern size in such a semiconductor integrated circuit device and to set the substrate diameter to be larger, it is necessary to control the film thickness deviation in the insulating film that is the structural component of the semiconductor integrated circuit device during the manufacturing proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23F4/00H01L21/00H01L21/205H01L21/3065H01L21/31
CPCC23C16/45565H01L21/67069
Inventor 上田聪中岛环
Owner PANASONIC CORP