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Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment

A plasma and equipment technology, applied in the field of plasma equipment, can solve problems such as reduced productivity and defects

Active Publication Date: 2007-01-17
ADAPTIVE PLASMA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, specific rules and standards for this aging method have not been reported
Thus, during actual mass production, wafers experiencing the first wafer effect are discarded, thus reducing productivity
[0005] In particular, chamber idle time inevitably occurs during continuous production, and therefore, in addition to initial defects of products in the chamber of the plasma apparatus, defective products may be produced during continuous production

Method used

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  • Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment
  • Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment
  • Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment

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Embodiment Construction

[0017] When a plasma apparatus performing a plasma process for manufacturing a semiconductor device such as a deposition process or an etching process is operated after a predetermined chamber idling period, a reactive gas is supplied into the process chamber before a wafer is introduced into the process chamber so that The plasma is generated and then the internal state of the process chamber is diagnosed so that initial defects such as first wafer effects are prevented. This invention is proposed by the preferred embodiment of the present invention, which will be described in detail below.

[0018] In order to effectively diagnose the internal state of the process chamber, a preferred embodiment of the present invention proposes the use of silicon oxide (SiO X ) and the emission intensity of fluorocarbons (CF X ) as a measurement parameter for diagnosis, said ratio being obtained from the results of spectroscopic analysis of the plasma state in the chamber. In a preferred ...

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Abstract

A plasma equipment seasoning method and plasma equipment to which the seasoning method is applied. The seasoning method comprising the steps of measuring the ratio of optical emission intensity of silicon oxide (SiOx)-based chemical species to optical emission intensity of carbon fluoride compound (CFY)-based chemical species present in a process chamber of plasma equipment before operating the plasma equipment to perform a plasma process, determining whether the value of the measured optical emission intensity ratio is within a predetermined range of normal state or not, and, when reaction gas to be used in the plasma process is supplied into the process chamber based on the result of determination such that the value of the measured optical emission intensity ratio is within the predetermined range of normal state, seasoning the interior of the process chamber to change the ratio of components of the reaction gas, and thus, to change the optical emission intensity ratio.

Description

technical field [0001] The present invention relates to a plasma device used in manufacturing semiconductor devices, and more specifically, to a plasma device aging method and a plasma device to which the plasma device aging method is applied. Background technique [0002] Recently, plasma equipment is increasingly used in semiconductor device manufacturing processes. Plasma equipment is primarily used to deposit layers of material on semiconductor wafers or to etch semiconductor wafers. [0003] However, when operating a plasma apparatus to perform a semiconductor manufacturing process such as a deposition process or an etching process, the following problems may arise. When a deposition or etch process is performed in a process chamber of a plasma apparatus after a predetermined chamber idle period, an initial defect known as a first wafer effect may occur. Especially when performing an etching process, the first wafer effect is serious. [0004] This first wafer effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065G01N21/68H01L21/311H01L21/66
CPCH01L22/26G01N21/68H01L21/31116H01L21/3065
Inventor 宋荣洙吴相龙金升基金南宪
Owner ADAPTIVE PLASMA TECH