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Transistor manufacture

A technology of transistors and semiconductors, applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve problems such as difficulty in optical patterning

Active Publication Date: 2010-09-08
BEIJING XIAOMI MOBILE SOFTWARE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Thin film fabrication typically does not achieve the same low feature sizes as achieved in single crystal semiconductor fabrication due to the often need to pattern large areas sometimes with not perfectly flat substrates, making optical patterning more difficult

Method used

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  • Transistor manufacture
  • Transistor manufacture
  • Transistor manufacture

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Experimental program
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Embodiment Construction

[0058] Referring to FIGS. 2 to 6, a method of manufacturing a source-gate transistor according to a first embodiment of the present invention will now be described.

[0059] A transparent substrate 2 which is glass in this embodiment but could also be transparent plastic or other transparent material is covered with a gate metal layer 4 . The gate metal can be, for example, 100 nm thick Cr or heavily doped polysilicon. As known to those skilled in the art, the gate metal layer 4 is patterned using a photoresist patterned through a first mask.

[0060] Then, a silicon dioxide layer 6 serving as a gate insulator is deposited, followed by a polysilicon thin film layer 8 serving as an active transistor layer, realizing the structure shown in FIG. 2 .

[0061] Next, an insulating layer 10 is deposited, which in the completed transistor will form the field plate, followed by a negative photoresist 12 . Using the gate 4 as a mask, the photoresist 12 is patterned by illumination throu...

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PUM

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Abstract

A method of making a source-gated transistor is described, in which a gate (4) is provided on substrate (2) followed by gate insulator (6) and semiconductor layer (8). The layer is patterned to align the source with the gate (4) using photoresist (12) and back illumination through the substrate (2) with the gate (4) acting as a mask. The distance between source and drain may also be self-aligned using a spacer technique.

Description

technical field [0001] The present invention relates to a method of manufacturing a transistor and a transistor manufactured by the method. Background technique [0002] The method relates in particular to the manufacture of source-gated transistors of the type described in "Source-gated Thin-Film Transistors" by Shannon and Gerstner, IEEE Electron Device Letters, Vol. 24, No. 6, June 2003 . [0003] Such a transistor is schematically shown in FIG. 1 . The gate electrode 100 is separated from the semiconductor layer 106 by a gate insulator 102 . The source 110 forms a Schottky barrier with the semiconductor layer 106 and the drain 104 is laterally spaced apart from the source 110 . The structure is disposed on a substrate 108 . [0004] Instead of using field effects to adjust the conduction of the channel between two ohmic contacts, a Schottky barrier at the source 110 is used to confine the flow of carriers as in conventional thin film transistors (TFTs). Using a gate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/45H01L29/417H01L21/336H01L29/786
CPCH01L29/7839H01L29/458H01L29/66765H01L29/78696H01L29/41733H01L29/78618
Inventor J·M·香农C·格拉塞S·D·布拉泽顿
Owner BEIJING XIAOMI MOBILE SOFTWARE CO LTD