Semiconductor processing
A semiconductor and processing chamber technology, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, crystal growth, etc., can solve problems such as adhesion, difficult quantitative measurement, wafer stress damage, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0057] The CV silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 using conventional grinding equipment. Surface roughness was measured using a contact profilometer. Mechanical treatment was carried out by first treating with a 150-grit diamond wheel and then with a 320-grit diamond wheel. Grind at 1750 rpm for 9 hours. Photographs of the surface of the pedestal were taken. The upper part of Figure 4 shows a photograph at 30X magnification of the machined surface portion of the susceptor. Figure 4 shows characteristic grooves and reliefs produced by conventional mechanical processing.
[0058] Then through the Pellon Pad using diamond paste with a particle size of 4-8 microns TM The lapping pad laps the base ring. Grinding was carried out for 2 hours at a surface speed of 600 m / min.
[0059] Then take a picture of a portion of the surface of the base. The lower part of Figure 4 shows a 30X magnification photograph of the lapped susceptor. Groove...
Embodiment 2
[0064] The CVD silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 microns using conventional grinding equipment and methods as described in Example 1 . Surface roughness was measured using a contact profilometer.
[0065] Then pass through the Pellon Pad using a diamond paste with a particle size of 4-8 microns TM The lapping pad laps the base ring. Grinding at a surface speed of 1200 m / min for 2 hours. The susceptors were then polished for 3 hours using diamond paste with a particle size of 2-4 microns. Ra is expected to be less than 0.05 microns and Rz(din) to be less than 0.5 microns as measured by a contact profilometer.
[0066] The susceptor ring is then placed in the wafer holder and the semiconductor wafer is placed in the susceptor ring. The device was then placed in a CVD furnace with an inert argon atmosphere. The temperature of the heating furnace was raised from room temperature to 1100°C. The apparatus was heated in a furnace for 10...
Embodiment 3
[0068] The CVD silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 microns using conventional grinding equipment as described in Example 1. Surface roughness was measured using a contact profilometer.
[0069] Then pass through the Pellon Pad using a diamond paste with a particle size of 4-8 microns TMThe lapping pad laps the base ring. Grinding for 3 hours at a surface speed of 1500 m / min. The susceptors were then polished for 4 hours using diamond paste with a particle size of 0.25-1 micron. Ra is expected to be 0.005 microns and Rz(din) to be 0.05 microns. The edge radius of the susceptor is expected to be greater than 0.1mm.
[0070] The susceptors are then placed in the wafer boat. A silicon semiconductor wafer is placed in a susceptor boat, which is then placed in a furnace. An atmosphere of inert argon and hydrogen was provided to the furnace. The furnace was heated to 1200°C, and the boat remained in the furnace for 10 hours. Allow the t...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Granularity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More