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Nonvolatile semicondutor storage device and manufacturing method thereof

A non-volatile, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as the shape that hinders the stability of the control gate, hinders the size of the groove, and increases the area of ​​​​the memory cell

Inactive Publication Date: 2007-05-30
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This prevents the control gate from being formed into a stable shape
In addition, since the control gate is formed inside the groove, reduction in the size of the groove is hindered, resulting in an increase in the memory cell area.

Method used

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  • Nonvolatile semicondutor storage device and manufacturing method thereof
  • Nonvolatile semicondutor storage device and manufacturing method thereof
  • Nonvolatile semicondutor storage device and manufacturing method thereof

Examples

Experimental program
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no. 1 example

[0025] A first exemplary embodiment of the present invention will be described below with reference to FIGS. 1 and 2F. FIG. 1 shows the structure of one memory cell in the nonvolatile semiconductor memory of this embodiment. FIG. 2F shows the structure of the nonvolatile semiconductor memory of this embodiment. As shown in FIG. 1, the memory cell 100 in the nonvolatile semiconductor memory of the present embodiment includes a semiconductor substrate 101, a drain 102, a groove (referred to as a trench) 103, a source 104, a first gate Insulating film 105 , floating gate 106 , second gate insulating film 107 , control gate 108 , and offset region 109 . This embodiment uses a floating gate as an example of a storage node described in the claims for demonstration purposes.

[0026] The drain 102 is formed on the surface of the semiconductor substrate 101 . The semiconductor substrate 101 has a groove 103 inside which a source electrode 104 is formed on the bottom surface. The f...

no. 2 example

[0041] Hereinafter, referring to FIG. 3, a second exemplary embodiment of the present invention will be described. FIG. 3 is a cross-sectional view showing the structure of one memory cell in the nonvolatile semiconductor memory according to the present embodiment. In FIG. 3, the same elements as those in FIG. 1 are denoted by the same reference numerals. As shown in FIG. 3, in the nonvolatile semiconductor memory of this embodiment, a storage unit 100 in a storage unit includes a semiconductor substrate 101, a drain 102, a groove 103, a source 104, a first gate insulating film 105 , floating gate 106 , second gate insulating film 107 , control gate 108 , offset region 109 , first insulating film 110 a , first insulating film 110 b , and semiconductor film 114 . In the first embodiment, the groove 103 is formed directly in the semiconductor substrate 101, whereas in the present embodiment, the groove 103 is formed in the first insulating film 110a. Therefore, the semiconduct...

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Abstract

A nonvolatile semiconductor storage device includes a plurality of memory cells, each including a drain formed above a substrate, a source formed at a bottom of a groove in the substrate, a floating gate formed above the substrate between the drain and a side surface of the groove, and a control gate formed above the floating gate. The groove is shared by adjacent memory cells. The side surface of the groove is substantially aligned with a side end of the floating gate. The groove is filled with an insulating film.

Description

technical field [0001] The present invention relates to a nonvolatile semiconductor memory and a manufacturing method thereof, in particular, to a nonvolatile semiconductor memory device for injecting electrons from a source side to a storage node such as a floating gate or a trap insulating film. Non-conductive semiconductor memory and its manufacturing method. Background technique [0002] Nonvolatile semiconductor memories that store information by accumulating electrons in storage nodes such as floating gates are known. In this type of nonvolatile semiconductor memory, hot electrons are generated on the drain side and then injected into the floating gate, thereby writing data. This injection mechanism is called channel hot electron injection (CHEI). However, on the drain side, the generation of hot electrons requires a large amount of current to flow into the memory cell, and a larger write current and longer write time are problems to be solved in recent high-capacity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L29/788H01L21/8247H01L21/336
CPCH01L29/66825H01L29/7885
Inventor 儿玉典昭
Owner NEC ELECTRONICS CORP