Vertically structured gan type led device

Abstract

The invention provides an LED vertical to a GaN. The LED vertical to a GaN comprises: an n-electrode; an n-type GaN layer formed under the n-electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer, the p-type GaN layer having a first uneven structure formed on a surface that does not contact the active layer; a p-type reflective electrode formed under the p-type GaN layer having the first uneven structure; and a support layer formed under the p-type reflective electrode.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2005-112710 filed with the Korean Industrial Property Office on Nov. 24, 2005, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a vertical gallium nitride (GaN) based light emitting diode (LED), and more particularly, to a vertical GaN based LED with high external quantum efficiency. Background technique [0004] Typically, GaN-based LEDs are grown on sapphire substrates. Sapphire substrates are rigid and non-conductive, and have low thermal conductivity. Therefore, it is difficult to reduce the size of GaN-based LEDs to reduce costs or improve light intensity and chip characteristics. In particular, heat dissipation is very important for LEDs because a large current will be applied to the GaN-based LEDs to increase the light intensity of the GaN-based LEDs. To address these...

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Problems solved by technology

[0019] However, according to the vertical GaN-based LED fabricated using the method disclosed in U.S. Patent Application Publication No. 20030222263, since a convex hemispherical pattern for enhancing external quantum efficiency is formed on the surface of the LED structure, there is a limit to the The surface of the LED structure on which the pattern is formed

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