Method for real-time generating flash-storage testing vector
A technology of test vectors and flash memory, which is applied in the direction of measuring electricity, measuring devices, semiconductor/solid-state device testing/measurement, etc. It can solve problems such as poor reusability, high writing complexity, and poor reliability, so as to shorten the generation time and improve The degree of reuse and the effect of shortening the development time
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[0009] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0010] The test operation of the flash memory (flash) generated by the library function in the present invention can be divided into three parts: erasing, reading and writing. The setting of library functions is also mainly divided into three categories, which can be written in the following function formats.
[0011] The three library function formats for parallel output flash can be written as:
[0012] int *P_ER(int ctr_pin, r, long int er_time);
[0013] int*P_PGM(int ctr_pin, long int start_adr, long intend_adr, int pgm_time, int*srcdata);
[0014] int*P_RD(int ctr_pin, long int start_adr, long intend_adr, int *fetdata)
[0015] Among the above functions, int*P_ER(int ctr_pin, long int er_time) indicates the library function used for erasing, where ctr_pin indicates the control state setting of the control pin, and er_time indicates the erasing time s...
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