Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible device on which pattern of 2-dimensional material is formed and manufacturing method thereof

a two-dimensional material and flexible technology, applied in the direction of semiconductor devices, photomechanical exposure devices, electrical devices, etc., can solve the problems of difficult to realize a desired pattern (particularly a micro- or nano-pattern), and the yield of nano or micro pattering graphene is very low, so as to achieve reasonable yield and produce economic effects

Active Publication Date: 2020-10-13
SEOUL NAT UNIV R&DB FOUND
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0016]The technology according to the various exemplary embodiments of the present disclosure allows formation of a very small two-dimensional material pattern of nanometer to micrometer scales on a flexible substrate through the common lithography process. In addition, the technology provided by the present disclosure allows manufacturing of a flexible substrate on which a two-dimensional material such as graphene is patterned through a relatively simple process and with a reasonable yield. Through this, a flexible device that can be utilized for semiconductors, sensors, wearable devices, flexible displays, etc. can be produced economically.

Problems solved by technology

But, for a flexible substrate, it is difficult to realize a desired pattern (particularly, a micro- or nano-pattern) by the common lithography process on the flexible substrate after transferring a two-dimensional material due to the material characteristics of the flexible substrate.
However, there are problems in that the surface is distorted or unstable and the yield of nano or micro pattering of graphene is very low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible device on which pattern of 2-dimensional material is formed and manufacturing method thereof
  • Flexible device on which pattern of 2-dimensional material is formed and manufacturing method thereof
  • Flexible device on which pattern of 2-dimensional material is formed and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024]The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0025]The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “includes”, “comprises” and / or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or compone...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
flexibleaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The present disclosure provides a method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon includes: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority of Korean Patent Application No. 10-2018-0045761, filed on Apr. 18, 2018, in the KIPO (Korean Intellectual Property Office), the disclosure of which is incorporated herein entirely by reference.BACKGROUND OF THE INVENTIONField of the Invention[0002]The present disclosure relates to a flexible device having a pattern of a two-dimensional material formed thereon and a method for manufacturing the same, more particularly to a micro- or nano-pattern of a two-dimensional material such as graphene formed on a flexible substrate constituting a flexible device, and a method for manufacturing the same.Description of the Related Art[0003]Recently, as the interests in wearable devices, etc. utilizing flexible devices are increasing, two-dimensional materials are researched actively. The two-dimensional material refers to a material with a size of several nanometers (nm) in which small atoms are arranged in a single la...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/02H01L21/3213H01L29/24H01L29/16
CPCH01L21/02568H01L29/1606H01L21/02425H01L29/24H01L21/02527H01L21/3213H01L21/7806H01L21/02521H01L21/0237H10K71/231H10K71/80H01L21/0277H01L21/324G03F7/20
Inventor JANG, HO WONKIM, YEONHOOHONG, BYUNG HEE
Owner SEOUL NAT UNIV R&DB FOUND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products