Asymmetric mosfet devices

Inactive Publication Date: 2001-08-16
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

0006] One embodiment of the present invention includes a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The MOSFET includes, a substrate having a well of a first conductivity type. The MOSFET also includes source and drain regions, of a second conductivity type, formed in the well apart from each other. Moreover, the MOSFET includes a first region, of a second conductivity type, formed in the well near the drain region. The first region has a low doping. Furthermore, the MOSFET includes a second region of a second conductivity type, formed near the source region. The second region has a doping substantially higher than the doping of the first region.
0007] A second embodiment of the present inv

Problems solved by technology

In MOSFETs with shorter channels there are effects, such as the short-channel effect, that cause significant deviations from the expected behavior of MOSFETs with long-channel.
As a result, the short-channel effect causes an increase in the leakage current when the transistor is in the cutoff condition.
There is a problem with the reduction of the off-state current when such reduction is at the expense of the saturated drive current.

Method used

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Embodiment Construction

[0022] In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention. However, one having ordinary skill in the art should recognize that the invention may be practiced without these specific details. In some instances, well-known circuits, structures, and techniques have not been shown in detail to avoid obscuring the present invention.

[0023] One embodiment of the present invention includes an asymmetric-well Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device and a method for fabricating this device. The asymmetric well MOSFET device has an improved ON / OFF current ratio as the source-side region has a doping substantially higher than a doping of the drain-side region and the drain-side region typically is lightly doped. The mechanisms for generating current for OFF and ON states in a MOSFET are different. It has been found that the OFF state current of a MOSFET device results from a diffusion mechan...

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Abstract

Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are disclosed. One MOSFET includes, a substrate having a well of a first conductivity type. The MOSFET also includes source and drain regions, of a second conductivity type, formed in the well arranged apart from each other. Moreover, the MOSFET includes a first region, of a second conductivity type, formed in the well near the drain region. The first region has a low doping. Furthermore, the MOSFET includes a second region of a second conductivity type, formed near the source region. The second region has a doping substantially higher than the doping of the first region. A second MOSFET includes a substrate having a well of a first conductivity type and source and drain regions, of a second conductivity type, formed in the well apart from each other. Moreover, the MOSFET includes a drain extension region of the second conductivity type, formed in the well near the drain region. Furthermore, the MOSFET includes a source extension region, of the second conductivity type, formed in the well near the source region. The source extension region is doped more heavily than the drain extension region. The source extension region extends deeper in the well than the drain extension region.

Description

BACKGROUND OF THE INVENTION[0001] (1) Field of the Invention[0002] The present invention relates to fabrication of semiconductor devices. More specifically, the present invention relates to fabrication of Metal Oxide Semiconductor Field Effect Transistors (MOSFET).[0003] (2) Background Information[0004] In MOSFETs with shorter channels there are effects, such as the short-channel effect, that cause significant deviations from the expected behavior of MOSFETs with long-channel. Short-channel effects become a dominant part of MOSFETs' behavior when the channel's length decreases below 2 micrometers. For example, it is known that when the channel's length of a MOSFET is on the order of a submicron or less, the short-channel effect influences the threshold voltage towards 0. As a result, the short-channel effect causes an increase in the leakage current when the transistor is in the cutoff condition.[0005] Currently, the well doping profile with respect to the source and the drain of a ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/6659H01L29/66659H01L29/7835
InventorTYAGI, SUNITAHMED, SHAHRIAR S.
OwnerINTEL CORP