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Contact-less probe of semiconductor wafers

a technology of contactless probes and semiconductor wafers, which is applied in the direction of radiation control devices, batteries, instruments, etc., can solve the problems of reducing the overall yield of the manufacturing process, increasing the chance of defects being produced in subsequent processing steps, and occasionally occurring unwanted defects

Inactive Publication Date: 2002-04-25
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0028] A radio frequency generator is one of the most versatile process and device monitors. For example, a radio frequency generator can be used to extract parameters such as device performance and silicide resistance. More specifically, the stage delay of an inverter ring oscillator designed with minimum length and narrow width MOSFETs will have a frequency which is dependent strongly on device performance and, thus, the frequency of operation can provide a measure of MOSFET performance. A second, similarly designed, inverter oscillator with very wide gates will additionally exhibit significant sensitivity to silicide resistance on the gate electrodes. Thus, a comparison of the frequency of operation of this oscillator with that of the former can afford a measure of silicide resistance.

Problems solved by technology

During the manufacturing of semiconductor devices and wafers, unwanted defects occasionally occur.
By making physical contact with the item being manufactured, the conventional systems introduce foreign materials in the production line, which increases the chance of defects being produced in subsequent processing steps and, therefore, reduces overall yield for the manufacturing process.

Method used

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  • Contact-less probe of semiconductor wafers
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  • Contact-less probe of semiconductor wafers

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Embodiment Construction

[0025] Referring now to the drawings, and more particularly to FIG. 1, a a contact-less probe is illustrated. As mentioned above, the present invention provides a structure and method for determining important device parameters and in-line yield parameters (such as device channel length and metal defects), without physically probing (contacting) the item being manufactured.

[0026] The invention includes a light powered generator 10, a radio frequency generator 11, a radio frequency receiver 12, a charge transfer circuit 13 and a light source 14 to power the device under test (DUT) 15, as shown in FIG. 1.

[0027] When the DUT 15 is powered by the charge transfer circuit 13, the DUT 15 will send a voltage or current to the radio frequency generator 11 (e.g., ring oscillator). Depending on the DUT output, the radio frequency generator 11 output frequency will vary accordingly.

[0028] A radio frequency generator is one of the most versatile process and device monitors. For example, a radio ...

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PUM

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Abstract

A device, having circuits formed thereon, comprises a circuit including a frequency generator for generating a detectable radio frequency energy when powered and a power generator, coupled to the frequency generator, for generating power when exposed to light.

Description

[0001] 1. Field of the Invention[0002] The present invention generally relates to devices for testing semiconductor wafers during manufacturing and, more specifically, to testing devices which do not contact the device under test (DUT).[0003] 2. Description of the Related Art[0004] During the manufacturing of semiconductor devices and wafers, unwanted defects occasionally occur. In order to reduce such defects and increase production yield it is desirable to test the item being manufactured at various points during the manufacturing process.[0005] Conventional systems remove the item being manufactured from the production line at different fabrication steps and test the item for defects. Depending on the development needs, a semiconductor wafers could be pulled at the post-silicide polysilicon stage, during the local interconnect stage or at several of the metalization stages, such as post metal-1 anneal, post via-1 planarization, or post metal-2 etch, for testing.[0006] Conventiona...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01R31/311
CPCG01R31/311Y10S136/293Y10S136/291
Inventor COOK, DONALD J.NOWAK, EDWARD J.TONG, MINH H.
Owner INT BUSINESS MASCH CORP
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