Semiconductor processing methods
a technology of semiconductors and processing methods, applied in the field of semiconductor processing methods, can solve the problems of reducing the accuracy and precision with which a masking pattern is masked, reflected waves can be constructively and/or destructively interfered, and the thickness of the mask cannot be uniform,
Inactive Publication Date: 2005-01-27
HOLSCHER RICHARD +2
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
"The invention is a semiconductor processing method that includes annealing an antireflective material layer over a substrate and then adding a layer of photoresist. The photoresist is then patterned to create a mask. The unmasked portion of the antireflective material layer is then removed. The method also includes altering the optical properties of the antireflective material layer before adding the photoresist layer. This allows for improved patterning of the substrate."
Problems solved by technology
A difficulty that can occur when exposing photoresist to radiation is that waves of radiation can propagate through the photoresist to a layer beneath the photoresist and then be reflected back up through the photoresist to interact with other waves propagating through the photoresist.
The reflected waves can constructively and / or destructively interfere with other waves propagating through the photoresist to create periodic variations of light intensity within the photoresist.
Such variations of light intensity can cause the photoresist to receive non-uniform doses of energy throughout its thickness.
The non-uniform dose can decrease the accuracy and precision with which a masked pattern is transferred to the photoresist.
The number of materials available for use as antireflective materials is limited.
Method used
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[0013] This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
[0014] A method of the present invention is described with reference to FIGS. 1-3. Referring to FIG. 1, a semiconductor wafer fragment 10 is illustrated at a preliminary processing step. Wafer fragment 10 comprises a substrate 12, an overlying antireflective material layer 14, and a photoresist layer 16 over the antireflective material layer 14. The substrate can comprise, for example, a monocrystalline silicon wafer lightly doped with a conductivity-enhancing dopant. To aid in interpretation of this disclosure and the claims that follow, the term “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other mate...
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Abstract
In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.
Description
TECHNICAL FIELD [0001] The invention pertains to semiconductor processing methods, such as, for example, methods of patterning photoresist in which an antireflective material is utilized to attenuate (for example, absorb) radiation. BACKGROUND OF THE INVENTION [0002] Semiconductor processing frequently involves providing a photoresist layer over a substrate. Portions of the photoresist layer are subsequently exposed to light through a masked light source. The mask contains clear and opaque features defining a pattern to be created in the photoresist layer. Regions of the photoresist layer which are exposed to light are made either soluble or insoluble in a solvent. If the exposed regions are soluble, a positive image of the mask is produced in the photoresist. The photoresist is therefore termed a positive photoresist. On the other hand, if the non-irradiated regions are dissolved by the solvent, a negative image results. Hence, the photoresist is referred to as a negative photoresi...
Claims
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IPC IPC(8): G03F7/09
CPCG03F7/091Y10S430/151H01L21/3086H01L21/0276
Inventor HOLSCHER, RICHARDYIN, ZHIPINGGLASS, TOM
Owner HOLSCHER RICHARD