[pixel structure and fabricating method thereof]

Active Publication Date: 2005-06-09
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Another object of the present invention is to provide a structure of a pixel and a fabricating method thereof to increase the aperture ratio of the pixel.
[0011] Yet another object of the present invention is to provide a simp

Problems solved by technology

However, because the prior pixel storage capacitor uses the opaque metal layer as the capacitor electrode, it substantially reduces the aperture ratio of the pixel storage capacitor, reducing brightness of the displays.
However, the capacitance of the structure is reduced because of the shrinkage thereof.
I

Method used

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  • [pixel structure and fabricating method thereof]
  • [pixel structure and fabricating method thereof]

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Embodiment Construction

[0033]FIGS. 2A-2E are a schematic cross-sectional process flow showing a method of fabricating a structure of a pixel according to a first preferred embodiment of the present invention. Referring to FIGS. 2A and 2B, an active element 220 and a scan line (not shown) are formed on the substrate 210. The active element 220 is, for example, a low temperature polysilicon thin film transistor. The step of forming the active element 220 comprises, for example, first forming a polysilicon layer 222 on the substrate 210. Before the polysilicon layer 222 is formed, the step further comprises, for example, forming a buffer layer (not shown) on the substrate 210 for preventing ion contamination in the polysilicon layer 222 from the substrate 210. The polysilicon layer 222 is formed from an amorphous silicon layer by, for example, a thermal annealing process. Then, a gate dielectric layer 224 is selectively formed on the substrate 210 for covering the polysilicon layer 222. A gate terminal 226 i...

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Abstract

A pixel structure and a fabricating method thereof are disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application claims the priority benefit of Taiwan application serial no. 92134284, filed on Dec. 5, 2003. BACKGROUND OF INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a structure of a pixel and a fabricating method thereof, and more particularly to a structure of a pixel with an electrical field shielding layer between a data line and a pixel electrode for avoiding the interference between the data line and the pixel electrode, and a fabricating method thereof. [0004] 2. Description of the Related Art [0005] Thin Film Transistor Liquid Crystal Display (TFT LCD) comprises a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of pixels arranged in arrays. Each pixel comprises a thin film transistor, a pixel electrode and pixel storage capacitor. The thin film transistor comprises a gate ...

Claims

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Application Information

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IPC IPC(8): G02F1/1343G02F1/1362H01L33/00
CPCG02F1/136213G02F2001/136218G02F1/136227G02F1/136218
Inventor YANG, CHIEN-SHENG
Owner AU OPTRONICS CORP
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