Apparatus for direct plating on resistive liners

Inactive Publication Date: 2006-07-27
IBM CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0011] The measuring device of the apparatus is not limited and can include one or more reference electrodes, a light source (such as a laser or light-emitting diode) and at least one photo detector (such as a photodiode) to measure the reflectivity of the at least one light sou

Problems solved by technology

However, these methods apply only in the case where a sufficient plating overpotential exists over the whole substrate surface, from edge to center.
In the case of thin copper seeds (5-50 nm), the sheet resistance is still low enough to ensure deposition over the whole substrate surface, although with a non-uniform growth rate in the case of a primary current distribution.
Additionally, too low current or overpotential results in a low density of nucleation sites leading to powdery, poorly adherent deposits.

Method used

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  • Apparatus for direct plating on resistive liners
  • Apparatus for direct plating on resistive liners
  • Apparatus for direct plating on resistive liners

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Embodiment Construction

[0029] U.S. Published Application No. 2004 / 0069648 A1, the entire disclosure of which is incorporated herein by reference, discloses a method for the direct electroplating of a relatively low resistive metal, such as copper, on a resistive substrate. That method allows plating of copper directly on at least one liner layer, where the liner layer(s) act as a diffusion barrier for copper into the dielectric. These diffusion barrier layers typically have a sheet resistance, Rs, which can be several orders of magnitude higher than for currently used copper seed layers. For example, a typical diffusion barrier layer sheet resistance may be in the range of 5 to 300Ω / square, whereas copper seed layers may have a resistance in the range of 1 to 3Ω / square.

[0030] The method disclosed in U.S. Published Application No. 2004 / 0069648 A1 can be described as direct plating or seedless plating. This method is based on the fundamental concept that the driving force for plating, known as the overpote...

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Abstract

An apparatus for direct electroplating of a conductive material, such as copper, on resistive liners or substrates is provided. The apparatus includes an integrated in-situ measuring system to follow the actual progress of the front of the conductive material during plating. Feed-back of this information to a power supply allows for more precise control of the effective current density during plating.

Description

FIELD OF THE INVENTION [0001] The present invention relates to electroplating an electrically conductive material such as a relatively low resistive metal and especially copper onto a platable resistive metal barrier layer or stack of layers. More particularly, the present invention relates to an apparatus for directly plating onto the resistive metal without the need of a seed or catalyst layer, and especially without the need of a copper seed layer (even though a thin seed may be present, e.g. about 1.ANG.-about 10.ANG.). The present invention makes it possible to form a continuous and relatively uniform layer by growing a thin film from the edge of the surface to be plated towards its center by controlling the conditions of the current or voltage being applied. BACKGROUND OF THE INVENTION [0002] The current damascene plating process and especially that for copper requires a copper seed as a conductive layer on top of the highly resistive barrier liner which covers the underlying ...

Claims

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Application Information

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IPC IPC(8): C25D21/12
CPCC25D21/12H01L21/2885H01L22/26H01L2924/0002H01L2924/00
Inventor VEREECKEN, PHILIPPE M.ANDRICACOS, PANAYOTISDELIGIANNI, HARIKLIAKWIETNIAK, KEITH T.ANDRICACOS, CALIOPI
Owner IBM CORP
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