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Fin field effect transistors (FinFETs) and methods for making the same

a technology of field effect transistor and finfet, which is applied in the field of sineconductor devices, can solve the problems of limited ability to tailor the structure of sineconductor resulting from such conventional methods

Inactive Publication Date: 2007-01-11
HOVIS WILLIAM P +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention provides methods and apparatus for semiconductor device manufacturing. The methods involve forming a fin of a FinFET, processing the first side of the fin, and then forming the second side of the fin while supporting the first side. The apparatus include a fin, a first dielectric, and a second dielectric, as well as a first gate conductor and a second gate conductor for controlling a current through the channel. The invention allows for improved semiconductor device manufacturing and performance."

Problems solved by technology

Additionally, the ability to tailor the structure of FinFETs resulting from such conventional methods may be limited.

Method used

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  • Fin field effect transistors (FinFETs) and methods for making the same
  • Fin field effect transistors (FinFETs) and methods for making the same
  • Fin field effect transistors (FinFETs) and methods for making the same

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Embodiment Construction

[0048] The present invention provides improved semiconductor devices and methods for making the same. More specifically, the present invention provides improved fin field effect transistors (FinFETS) and methods for making the same. The present methods of manufacturing FinFETs provide support (e.g., on one or more sides) to silicon which ultimately forms a fin during (e.g., throughout) manufacturing. In this manner, damage to the fin while manufacturing a FinFET may be reduced and / or eliminated, and therefore, a semiconductor device manufacturing yield may be improved.

[0049] Further, in contrast to conventional methods, the variability of a structure of a FinFET resulting from the present methods is not limited. For example, a FinFET in accordance with the present methods and apparatus may include a first gate conductor, which has a first work function, coupled to a first gate of the FinFET, and may include a second gate conductor, which has a different (e.g., a second) work functi...

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Abstract

In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) forming a first side of a fin of a fin field effect transistor (FinFET); (2) processing the first side of the fin; and (3) forming a second side of the fin while supporting the first side of the fin. Numerous other aspects are provided.

Description

[0001] The present application is a division of U.S. patent application Ser. No. 11 / 132,652 filed on May 19, 2005, which is incorporated by reference herein in its entirety.FIELD OF THE INVENTION [0002] The present invention relates generally to semiconductor devices, and more particularly to fin field effect transistors (FinFETs) and methods for making the same. BACKGROUND [0003] A FinFET is a transistor that includes a fin (e.g., of silicon) separating a first gate from a second gate, which is opposite the first gate, of the transistor. Yields of conventional methods of manufacturing FinFETs are reduced due to fin damage during manufacturing. Additionally, the ability to tailor the structure of FinFETs resulting from such conventional methods may be limited. For example, gate dielectrics respectively coupled to opposing sides of the fin during manufacturing are of the same width and formed of the same material. Further, a work function of a gate conductor coupled to the first gate...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/336
CPCH01L29/42384H01L29/785H01L29/66795H01L29/4908
Inventor HOVIS, WILLIAM P.MANDELMAN, JACK A.
Owner HOVIS WILLIAM P
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