Cooled pvd shield

Abstract

The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and / or during down time.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. provisional patent application Ser. No. 60 / 805,858 (APPM / 011276L), filed Jun. 26, 2006, which is herein incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the present invention generally relate to a cooled shield used in a physical vapor deposition (PVD) system.[0004]2. Description of the Related Art[0005]PVD using a magnetron is one method of depositing material onto a substrate. During a PVD process a target may be electrically biased so that ions generated in a process region can bombard the targyet surface with sufficient energy to dislodge atoms from the target. The process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering. The sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposite...

AI Technical Summary

Benefits of technology

[0009]The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and / or during down time.

[0013]In another embodiment, a physical vapor deposition method is disclosed. The method comprises positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame, raising the susceptor and shadow frame to a processing position, and depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame.

Problems solved by technology

As chamber components are moved, material that has been deposited thereon may flake off and contaminate the substrate.

When depositing thin films over substrates such as wafer substrates, glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, flaking may contaminate the substrate.

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