Non-volatile memory device having separate charge trap patterns and method of fabricating the same

Inactive Publication Date: 2008-05-08
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0016]It is therefore a feature of an embodiment of the present invention to provide a non-volatile memory device having separate charge trap patterns in order to prevent charge spreading.
[0017]It is the

Problems solved by technology

The charge spreading may lead to bad data retention of the me

Method used

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  • Non-volatile memory device having separate charge trap patterns and method of fabricating the same
  • Non-volatile memory device having separate charge trap patterns and method of fabricating the same
  • Non-volatile memory device having separate charge trap patterns and method of fabricating the same

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[0027]In FIGS. 3 to 12, section “1” is a cross-sectional view taken along line I-I′ of FIG. 2, and section “2” is a cross-sectional view taken along line II-II′ of FIG. 2.

DETAILED DESCRIPTION OF THE INVENTION

[0028]Korean Patent Application No. 10-2006-0109534, filed on Nov. 7, 2006, in the Korean Intellectual Property Office, and entitled: “Non-Volatile Memory Device Having Separate Charge Trap Patterns and Method of Fabricating the Same,” is incorporated by reference herein in its entirety.

[0029]The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0030]In the...

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PUM

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Abstract

A non-volatile memory device prevents charge spreading. The non-volatile memory device includes an isolation trench in a semiconductor substrate, an isolation layer partially filling the isolation trench between first and second fins defined by the isolation trench, a control gate electrode crossing the first and second fins, a first charge trap pattern between the first fin and the control gate electrode, and a second charge trap pattern between the second fin and the control gate electrode.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]Embodiments of the present invention relate to a non-volatile semiconductor device and a method of fabricating the same. More particularly, embodiments of the present invention relate to a non-volatile memory device having separate charge trap patterns and a method of fabricating the same.[0003]2. Description of the Related Art[0004]Semiconductor memory devices storing data may be classified into volatile memory devices and non-volatile memory devices. While the volatile memory devices lose stored data when a power supply is interrupted, the non-volatile memory devices retain the stored data even when the power supply is interrupted. Accordingly, non-volatile memory devices, e.g., flash memory devices, find wide applications in portable storage devices or mobile telecommunication systems.[0005]Meanwhile, as electronic systems gradually become smaller and require low-power consumption components, the flash memory devices...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/792
CPCH01L27/115H01L27/11568H01L27/1203H01L29/792H01L29/78H01L29/7851H01L29/66833H10B43/30H10B69/00H01L29/40117
Inventor LIM, JU-WANJANG, HYUN-SEOKCHUNG, BYUNG-HONGHWANG, KI-HYUNYANG, SANG-RYOL
Owner SAMSUNG ELECTRONICS CO LTD
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