Non-volatile memory device having separate charge trap patterns and method of fabricating the same

Abstract

A non-volatile memory device prevents charge spreading. The non-volatile memory device includes an isolation trench in a semiconductor substrate, an isolation layer partially filling the isolation trench between first and second fins defined by the isolation trench, a control gate electrode crossing the first and second fins, a first charge trap pattern between the first fin and the control gate electrode, and a second charge trap pattern between the second fin and the control gate electrode.

Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] Embodiments of the present invention relate to a non-volatile semiconductor device and a method of fabricating the same. More particularly, embodiments of the present invention relate to a non-volatile memory device having separate charge trap patterns and a method of fabricating the same.

[0003] 2. Description of the Related Art

[0004] Semiconductor memory devices storing data may be classified into volatile memory devices and non-volatile memory devices. While the volatile memory devices lose stored data when a power supply is interrupted, the non-volatile memory devices retain the stored data even when the power supply is interrupted. Accordingly, non-volatile memory devices, e.g., flash memory devices, find wide applications in portable storage devices or mobile telecommunication systems.

[0005] Meanwhile, as electronic systems gradually become smaller and require low-power consumption components, the flash memory devices...

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