Plasma processing apparatus

Abstract

There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a continuation-in-part of U.S. patent application No. 11 / 947,610, filed on Nov. 29, 2007, the contents of which is incorporated by reference herein in its entirety, which claims priority to Korean Patent Application No. 10-2006-0124763, filed Dec. 8, 2006, Korean Patent Application No. 10-2007-0085561, filed Aug. 24, 2007 and Korean Patent Application No. 10-2007-0109448, filed Oct. 30, 2007, the contents of which are incorporated by reference herein in their entirety. This application also claims priority to Korean Patent application No. 10-2008-0031042, filed on Apr. 3, 2008 and all the benefits accruing therefrom under 35 U.S.C. 119, the contents of which are herein incorporated by reference in its entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a plasma processing apparatus, particularly a plasma processing apparatus that removes a variety of impurities on a ...

AI Technical Summary

Benefits of technology

The present invention provides a plasma processing apparatus that can effectively remove particles from the edge area of a substrate, sides, and backside as well as from the central region of the backside. The apparatus includes a chamber, an insulating plate, a ground electrode, and a lower electrode with multiple electrodes. The electrodes are arranged in a concentric and spaced apart manner. The apparatus can effectively remove particles from the substrate and improve the quality of plasma processing.

Problems solved by technology

Therefore, when the process is continued without removing the particles and thin films accumulated on the substrate, the substrate may be deformed or alignment of the substrate may become difficult.

Although the wet etching is generally used to remove particles accumulated on the surface of the substrate, it is difficult to selectively remove the particles in the edge area since process management of the wet etching is difficult.

Further, the wet etching process results in an increase of the process cost by using a large amount of chemicals and causes many environmental problems such as chemical waste disposal.

However, particles accumulated between the substrate holder and the substrate are not easily removed in the above configuration.

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