Method of forming plating layer

Inactive Publication Date: 2009-12-03
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0008]An aspect of the present invention provides a method of forming a plating layer in which a plating layer is formed with a su

Problems solved by technology

However, in a case where the external electrodes are formed by this method, the Ni/Au plating layer is not sufficiently thick.
Besides, the Ni/Au plating layer is not uniform in thickness since current is hardly supplied to an entire area of the substrate uniformly.
Moreover,

Method used

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[0022]Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions may be exaggerated for clarity, and the same reference signs are used to designate the same or similar components throughout.

[0023]FIGS. 1A to 1D are cross-sectional views illustrating a method of forming a plating layer according to an exemplary embodiment of the invention.

[0024]First, as shown in FIG. 1A, a substrate 101 is provided and a seed layer 102 is formed on a top surface of the substrate 101. The substrate 101 may include a conductive via and an internal electrode formed therein. Particularly, t...

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Abstract

There is provided a method of forming a plating layer, the method including: forming a seed layer on a substrate; forming a pattern layer on the seed layer, the pattern layer formed of a thermoplastic resin and including openings; forming a plating layer on portions of the seed layer corresponding to the openings; and removing the pattern layer. This method ensures that the plating layer is formed with a sufficient thickness and the substrate, particularly, a ceramic substrate suffers minimal chemical damage during a plating process. Moreover, the plating layer is formed with a more uniform thickness.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the priority of Korean Patent Application No. 2008-0051807 filed on Jun. 2, 2008, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method of forming a plating layer, and more particularly, to a method of forming a plating layer which ensures a sufficient plating thickness of the plating layer and minimum chemical damage to a substrate, notably, a ceramic substrate, during a plating process.[0004]2. Description of the Related Art[0005]In general, a multilayer ceramic substrate is utilized as a part incorporating an active device such as a semiconductor integrated circuit (IC) chip and a passive device such as a capacitor, an inductor and a resistor, or a simple semiconductor IC package. More specifically, the multilayer ceramic substrate is widely used to implement...

Claims

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Application Information

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IPC IPC(8): C25D5/10
CPCC25D5/022C25D5/12H05K1/0306H05K2203/1105H05K3/108H05K2201/0129H05K3/0076H01L21/28
Inventor KIM, YOUNG SUKOH, YONG SOOCHANG, BYEUNG GYUYOO, WON HEEPARK, SUNG YEOL
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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