Process for Preventing Development Defect and Composition for Use in the Same
a technology of composition and development defect, applied in the field of process for preventing development defect and composition for use in the same, can solve the problems of resist pattern pattern pattern pattern pattern pattern failure, chemically amplified photoresist is susceptible to acidic substances, basic substances and moisture influence, etc., to achieve the effect of preventing development defect and increasing the amount of thickness reduction
Inactive Publication Date: 2010-12-23
AKIYAMA YASUSHI +4
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- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0016]Another object of the present invention is to provide a composition for preventing development-defects used in above-described process.
[0022]In the present invention, these surfactants are formed by solving the determined amount of the acid and the base in water. At this time, the amount of the formed surfactant in the aqueous solution is made 0.1 to 25 weight-%, more preferably 2 to 4 weight-%. The aqueous solution is used as a composition for reducing development defects. If necessary, additives are further solved in this aqueous solution and the resulting solution may be used as a composition for preventing development-defects. In addition, the surfactant-containing aqueous solution may be formed by adjusting the concentration, for example, by adding the preformed high concentration aqueous surfactant to water containing additives if necessary or vise versa by diluting the preformed high concentration aqueous surfactant with an additive-containing aqueous solution if necessary.
Problems solved by technology
One of the factors is patterning failure upon forming a pattern using a resist.
This patterning failure of a resist pattern is caused, for example, by the dust existing in the resist or sticking onto the surface of the resist layer, by the deterioration of the resist due to floating chemical species in the clean room, by the coating failure of the resist or the like, or by the development failure.
In this process, the chemically amplified photoresist is susceptible to influence of acidic substances, basic substances and moisture in the atmosphere.
In addition, defects upon developing a resist layer have become a problem.
As a cause of these defects, there is illustrated insufficient dissolution of exposed portions into a developing solution due to insufficient contact between the developing solution containing water as a major component and the surface of a resist coating upon bringing the developing solution into contact with the resist surface, which leads to hole-opening failure of portions which are designed to open essentially.
However, when the protecting ratio is increased, the resist surface is liable to become hydrophobic, leading to deterioration in wetting properties for the developing solution.
This technique, however, requires introduction of an additional apparatus for the plasma treatment as well as includes the problem of decrease in throughput.
Although some effects can be obtained by this technique, the effects are at present still insufficient in ultra-fine working using the aforesaid chemically amplified photoresists.
Particularly in the case where surface coating for decreasing the development defects is formed on a chemically amplified photoresist, there may cause a round-topped or a T-topped pattern which may cause a trouble in an etching process when a surface coating composition, which is coated to reduce this development-defect, is compatible with a chemically amplified resist.
However, in said publication, there is no description of a control on the amount of reduced thickness in film thickness after developing a chemically amplified photoresist.
In addition, the method described in the publication has a problem.
That is, in the case where the anti-reflective coating composition described in said publication is used, when the chemically amplified photoresist is a positive-working photoresist, a pattern profile of a resist pattern formed is likely to become a T-letter-shape (T-top), and when being a negative-working photoresist, the pattern profile of the resist pattern formed is likely to become a round shape (round-top), thereby a problem of pattern dimension deterioration being taken place.
Further, it is said that problems in attaining uniform thickness of coating and uniform development to be caused with a recent increase in diameter of a substrate such as a silicon wafer make it difficult to form a finer pattern.
However, there generates a difference in circumferential speed between the central portion and the peripheral portion of the substrate, thereby a difference in speed of the coating generating.
In this situation, particularly when a chemically amplified photoresist is used as a resist and a developing process of a large-diameter substrate having a diameter of 8 inches or more is conducted, development defects in the peripheral portion are caused in some cases which have not conventionally been observed in treating a resist coating formed on a substrate having a diameter of 6 inches or less.
However, it is difficult to make this film thickness reduction large by using the composition for reducing development-defects.
In addition, in the publication, there is no description that a film thickness reduction can be controlled quantitatively.
Because of this there is a problem that it is difficult to obtain the composition for reducing development-defects which can provide an optimal film thickness reduction in order to make the pattern-profiler rectangular and good.
Method used
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Experimental program
Comparison scheme
Effect test
example-1
[0035]1.3 parts by weight of polyacrylic acid having weight average molecular weight of 3,000 as determined by polystyrene standards as a water-soluble polymer, 2.0 parts by weight of perfluoro-octylic acid (C7F15COOH) as an organic acid, 0.46 parts by weight of tetramethylammonium hydroxide (TMAH) (equivalent ratio (mole) of organic acid and base is 1:1.04) as a base were mixed up. Pure water was added thereto to make the total amount 100 parts by weight. Then, the solution was solved homogeneously at room temperature, and filtered with a 0.1 μm-filter to obtain the composition for preventing development-defects.
[0036]On the other hand, a positive-working photoresist comprising acetal type polymer manufactured by Clariant (Japan) K. K. (AZ DX3301P, ‘AZ’ is a registered trade mark.) was applied on an 8 inches silicon wafer by a spin coater made by Tokyo Electron Co. (Mark 8). It was pre-baked on a hot plate at 90° C. for 90 seconds to form a photoresist film of 480 nm in thickness o...
examples 2 to 5
[0038]The same manner was taken as in Example-1 except that the equivalent (mole) ratios of base were made as described in Table-1 below and the results in Table-1 were obtained.
TABLE 1FilmFilmReductionthicknessthicknessamount inbeforeafterfilmDevelopmentDevelopmentthicknessPattern(Å)(Å)(Å)Organic AcidBaseProfileExample-14819458923011.04almostrectangularExample-24789446032911.25rectangularExample-34796439540111.38rectangularExample-44837437945811.52almostrectangularExample-54809429951012.00almostrectangular
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Abstract
The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and / or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
Description
[0001]This application is a continuation of U.S. Ser. No. 10 / 518,105 filed Dec. 10, 2004 which claims priority to United States National Stage patent application under 35 U.S.C. §371 of International Patent Application No. PCT / JP03 / 07354, filed Jun. 10, 2003, which claims priority to Japanese Patent Application No. 2002-181127, filed Jun. 21, 2002.TECHNICAL FIELD[0002]This invention relates to a process for forming a resist pattern with a good profile by using a positive-working chemically amplified photoresist, and to a composition for preventing development-defects used in this process. More particularly, it relates to a process for forming a resist pattern by which a resist pattern with a good profile can be formed all over the large-diameter substrate when a resist pattern is formed by pattern-wise exposing a large-diameter substrate having formed thereon a chemically amplified photoresist coating followed by development, and to a composition for preventing development-defects u...
Claims
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IPC IPC(8): C07C309/02C07C53/21C07C55/14G03F7/11G03F7/16G03F7/38H01L21/027
CPCG03F7/168G03F7/11G03F7/38
InventorAKIYAMA, YASUSHITAKANO, YUSUKETAKAHASHI, KIYOHISAHONG, SUNG-EUNOKAYASU, TETSUO
OwnerAKIYAMA YASUSHI