Method of preparing a patterned film with a developing solvent
a technology of developing solvent and patterned film, which is applied in the direction of instruments, photomechanical equipment, and semiconductor/solid-state device details, etc., can solve the problems of affecting the performance of the integrated circuit, the need to remove the silicon left on the film-free region, and the excessive use of fluorine plasma, so as to reduce the cost of ownership, reduce the production time, and reduce the effect of plasma etching
Inactive Publication Date: 2012-10-11
DOW CORNING CORP
View PDF1 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0007]Due to the substantial absence of residual silicone on the film-free region of the substrate, less plasma etching is required as compared to when conventional developing solvents are used, resulting in decreased production times and a lower Cost of Ownership.
Problems solved by technology
The residual silicone left on the film-free region affects the performance of the integrated circuits and must be removed.
Excessive use of fluorine plasma can have negative effects on the integrated circuits.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
examples
[0058]Articles are prepared including a patterned film disposed on a substrate in accordance with the present invention. The patterned film is prepared from Dow Corning® WL5150 silicone composition by spin coating the silicone composition onto the substrate to form a film of the silicone composition. Articles are prepared with the film having a rim of about 16 um high, and an article is also prepared having a rim of about 40 um high in order to determine if film thickness has an effect on pattern formation when the articles are prepared in accordance with the method of the present invention. The spin speed and spin time are adjusted to obtain the specified thickness. Edge bead removal is performed using an EBR solvent including hexamethyldisiloxane present in an amount of about 100 percent by volume based on the total volume of the EBR solvent, commercially available from Dow Corning Corporation of Midland, Mich. A portion of the solvent in the silicone composition is then removed b...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| viscosity | aaaaa | aaaaa |
| viscosity | aaaaa | aaaaa |
| viscosity | aaaaa | aaaaa |
Login to View More
Abstract
A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.
Description
FIELD OF THE INVENTION[0001]The present invention generally relates to a method of preparing a patterned film. More specifically, the invention relates to a method of preparing a patterned film on a substrate including a film-free region that is substantially free of residual silicone after development.BACKGROUND OF THE INVENTION[0002]Patterned films formed from silicone compositions are used for many applications in the field of electronics, and are particularly useful in the fabrication of integrated circuit chips, optical devices, and MEMS devices. In particular, the patterned films are used for wafer level packaging applications on top of integrated circuits. The patterned films provide several important functions, including dielectric, mechanical and environmental protection. In addition, the patterned films act as a mechanism for redistribution of the connections from the tight pitch (center to center spacing between bond pads) on the integrated circuit chips to the relatively...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(United States)
IPC IPC(8): B32B3/10H01L29/06
CPCG03F7/0757Y10T428/24802G03F7/325G03F7/32G03F7/075
Inventor MEYNEN, HERMAN C.G.D.C.HARKNESS, BRIAN
Owner DOW CORNING CORP