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Memory system comprising nonvolatile memory device and related method of operation

a memory device and nonvolatile technology, applied in the field of electronic memory technologies, can solve the problems of slow operation and reduced reliability, and achieve the effect of improving reliability and performance of mlc nonvolatile memory devices

Inactive Publication Date: 2013-05-16
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a new technology that can make MLC nonvolatile memory devices more reliable and perform better.

Problems solved by technology

However, they may suffer from slower operation and reduced reliability, among other things.

Method used

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  • Memory system comprising nonvolatile memory device and related method of operation
  • Memory system comprising nonvolatile memory device and related method of operation
  • Memory system comprising nonvolatile memory device and related method of operation

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Embodiment Construction

[0024]Embodiments of the inventive concept are described below with reference to the accompanying drawings. These embodiments are presented as teaching examples and should not be construed to limit the scope of the inventive concept.

[0025]In the description that follows, the terms first, second, third, etc. may be used to describe various features, but the described features are not to be limited by these terms. These terms are used merely to distinguish between different features, so a first feature could alternatively be termed a second feature, and vice versa, without changing the meaning of the relevant description.

[0026]The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a”, “an” and “the” are intended to encompass the plural forms as well, unless the context clearly indicates otherwise. The terms “comprises” and / or “comprising,” when used in this specifi...

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PUM

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Abstract

A method of programming a nonvolatile memory device comprises receiving write data, detecting an address of a multi-level cell area associated with the write data, randomizing the write data using the address and programming the randomized data in a single-level cell area.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority under 35 U.S.0 §119 to Korean Patent Application No. 10-2011-0118923 filed on Nov. 15, 2011, the subject matter of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]The inventive concept relates generally to electronic memory technologies. More particularly, the inventive concept relates to memory systems comprising one or more nonvolatile memory devices and related methods of operation.[0003]Semiconductor memory devices can be roughly divided into two categories according to whether they retain stored data when disconnected from power. These categories include volatile memory devices, which lose stored data when disconnected from power, and nonvolatile memory devices, which retain stored data when disconnected from power. Examples of volatile memory devices include dynamic random access memory (DRAM) and static random access memory (SRAM). Examples of nonvolatile memory include ma...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G06F12/00
CPCG06F12/0246G06F2212/7208G06F2212/7201G11C16/10G11C16/06
Inventor WOO, SEONGHOONKIM, HAKSUN
Owner SAMSUNG ELECTRONICS CO LTD