Methods for quantitatively evaluating the quality of double patterning technology-compliant layouts

a technology of double patterning and quantitative evaluation, applied in the field of methods for fabricating integrated circuits, can solve the problems of significant handicaps such as lack of evaluation methodologies, and achieve the effect of improving the score of metri

Active Publication Date: 2013-08-01
GLOBALFOUNDRIES US INC
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]Methods are provided for fabricating an integrated circuit. In accordance with one embodiment, a method includes providing a double patterning technology-compliant logical design for the integrated circuit, the logical design including a plurality of elements and scoring the design of one or more of the plurality of elements to produce a design score. Once the design has been scored, the method may further include modifying the design based at least in part on the design score. Once the design has been finalized, the method may include generating a mask set implementing the modified logical design and employing the mask set to implement the logical design in and on a semiconductor substrate.
[0008]In accordance with a

Problems solved by technology

The lack of an evaluation methodology can be a significant handicap when comparing the p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods for quantitatively evaluating the quality of double patterning technology-compliant layouts
  • Methods for quantitatively evaluating the quality of double patterning technology-compliant layouts
  • Methods for quantitatively evaluating the quality of double patterning technology-compliant layouts

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024]The following detailed description is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description.

[0025]This invention establishes methods for fabricating an integrated circuit wherein a methodology to systematically quantify the quality of double patterning technology (DPT)-compliant layout designs for an integrated circuit in order to, for example, evaluate and provide guidance for any opportunistic layout modifications such that manufacturability- and yield-related issues can be improved. A DPT-optimized scoring methodology is provided to systematically, automatically, and quickly quantify the quality of DPT-compliant layouts. The score is assigned based on the layout design's robustness to a set of DPT-specific metrics.

[0026]Table ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a double patterning technology-compliant logical design for the integrated circuit, the logical design including a plurality of elements; scoring the design of one or more of the plurality of elements to produce a design score; modifying the design based at least in part on the design score; generating a mask set implementing the modified logical design; and employing the mask set to implement the logical design in and on a semiconductor substrate.

Description

TECHNICAL FIELD[0001]The present invention generally relates to methods for fabricating an integrated circuit, and more particularly relates to methods that include scoring the quality of double patterning technology-compliant integrated circuit design layouts.BACKGROUND[0002]There is a continuing trend within the microelectronics industry to incorporate more circuitry having greater complexity on a single integrated circuit (IC) chip. Maintaining this trend generally entails shrinking the size of individual devices within the circuit by reducing the critical dimensions (CDs) of device elements along with the pitch, or the CD of such an element added to the spacing between elements. Microlithography tooling and processing techniques play an important role in resolving the features necessary to fabricate devices and accordingly, are continually under development to meet industry milestones relating to the CD and pitch characteristic of each new technology generation.[0003]High numeri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/50
CPCG06F17/5081G03F1/70G06F30/398
Inventor WANG, LYNN T.MADHAVAN, SRIRAMCAPODIECI, LUIGI
Owner GLOBALFOUNDRIES US INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products