Method for producing spin injection electrode

a technology of injection electrodes and spins, which is applied in the direction of magnetic film to substrate application, electrical apparatus, magnetic bodies, etc., can solve the problems of insufficient injection of spins into non-magnetic materials, low efficiency of spin injection from ferromagnetic materials into graphene, and insufficient lattice matching of crystalline phases of each of these materials, etc., to achieve high-efficiency spin injection

Active Publication Date: 2013-08-22
PANASONIC CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present patent discloses a method for making a spin injection electrode that can efficiently inject spin into a graphene. This results in a high-efficiency spin injection.

Problems solved by technology

Therefore, spins cannot be injected into the non-magnetic material sufficiently.
At present, however, the efficiency in spin injection from a ferromagnetic material into a graphene is extremely low (Journal of the Surface Science Society of Japan, vol.
However, although these ferromagnetic materials need to include crystalline phase in order to obtain a high spin polarization ratio, the crystalline phase of each of these materials is not lattice-matched to a graphene having a two-dimensional planar structure composed of six-membered rings.

Method used

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example 1

[0057]First, a graphene 1 was prepared by reference to the description of Science, vol. 306, p. 666-p. 669 (2004). Specifically, a cellophane adhesive tape was pushed against a highly oriented pyrolytic graphite (HOPG) having a thickness of 1 mm, to exfoliate a crystalline flake. A cellophane adhesive tape was further pushed against the exfoliated crystalline flake to exfoliate a part of the crystalline flake, and thus a thinner flake was obtained. The operation of exfoliating a part of an obtained flake with a cellophane adhesive tape is repeated a plurality of times, and then a flake of HOPG on a cellophane tape was rubbed onto a substrate made of sapphire. When evaluated using an atomic force microscope (AFM), the thickness of the graphene 1 on the sapphire substrate was about 1±0.5 nm. This thickness corresponds to the total thickness of several layers of graphene. It was separately confirmed that the same result can be obtained even when a substrate made of a material other tha...

example 2

[0069]In Example 2, the change in the interfacial resistance value (resistance change ratio R / R0) with respect to the change in the electric bias to be applied was evaluated. A stack of the sapphire substrate 7, the graphene 1, and the iron oxide 2, targeted for electric bias application, was fabricated similar to Example 1.

[0070]As the magnitude of the pulse voltage to be applied was increased from 3.5 V, the number of times Np of pulse application, at which the resistance change ratio R / R0 sharply changes as shown in FIG. 8, was decreased. On the other hand, as the magnitude of the pulse voltage to be applied was decreased from 3.5 V the Np was increased.

[0071]In the case where the magnitude of the pulse voltage to be applied was fixed to 3.5 V, the Np was increased when the pulse width was reduced from 1 μs, whereas the Np was decreased when the pulse width was increased from 1 μs. In this manner, it was confirmed that the interfacial resistance value between the graphene 1 and t...

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Abstract

A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.

Description

[0001]This is a continuation of International Application No. PCT / JP2011 / 006463, with an international filing date of Nov. 21, 2011, which claims the foreign priority of Japanese Patent Application No. 2010-259742, filed on Nov. 22, 2010, the entire contents of both of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present disclosure relates to methods for producing spin injection electrodes. More specifically, the present disclosure relates to a method for producing a spin injection electrode for injecting spins into graphene.[0004]2. Description of Related Art[0005]Substances made of carbon (C) take a wide variety of forms including, as well as diamonds, sheets, nanotubes, horns, and balls such as C60 fullerene. Furthermore, the physical properties of such substances are more various than their forms. The rich variety of physical properties prompts energetic research and development for application of the substances. ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L43/12
CPCH01F10/1936H01F41/30H01F41/205H01L43/12H10N50/01
InventorODAGAWA, AKIHIROMATSUKAWA, NOZOMU
OwnerPANASONIC CORP