Optical spin injection structure and injection method

Abstract

The invention provides an optical spin injection structure and an injection method. The optical spin injection structure comprises a substrate layer and a buffer layer, a resonance tunneling structural layer and a cap layer which grow on the substrate layer in sequence; the resonance tunneling structural layer is sequentially provided with a quantum well layer, an interval layer, a quantum point layer or the quantum point layer, the interval layer and the quantum well layer along the growth direction; the lattice constant of the quantum point layer is larger than that of the buffer layer, the interval layer and the cap layer. By adopting the resonance tunneling structure through the coupling-tunneling effect of the semiconductor quantum point layer and the quantum well layer, the problems of low initial spin polarization rate and high spin loss caused by energy relaxation in a barrier layer material in the prior art are solved.

Description

technical field [0001] The invention relates to the field of semiconductor application technology, in particular to an optical spin injection structure and injection method based on a tunneling effect. Background technique [0002] With the development of modern information technology, the size of devices is getting smaller and smaller, quantum effects are becoming more and more significant, and Moore's Law has been greatly challenged. Spintronics is the exploration of using the spin property of electrons in devices to simultaneously process and store information. The charge interaction energy of traditional electronic devices is on the order of electron volts, while the interaction energy of spin is on the order of millielectron volts, so spin devices have lower power consumption than traditional devices. Spin devices made of III-V compound semiconductor materials can be connected with traditional semiconductor processes without re-laying the production line, so they are a...

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