Phase change memory devices and methods of manufacturing the same

Abstract

A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority under 35 USC §119 to Korean Patent Application No. 10-2012-0059323, filed on Jun. 1, 2012 in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entirety.BACKGROUND[0002]1. Field[0003]Embodiments relate to a phase change memory device and a method of manufacturing the same. More particularly, example embodiments relate to a phase change memory device having a heat sink and a method of manufacturing the same.[0004]2. Description of the Related Art[0005]In a phase change memory device, Joule heat generated in a lower electrode and / or a phase change material layer in a memory cell may affect the crystallization of a phase change material layer in adjacent memory cells to cause a thermal crosstalk. In order to solve the problem, a heat sink absorbing Joule heat has been developed, however, there is no efficient method of forming and / or arranging th...

AI Technical Summary

Benefits of technology

[0023]According to some embodiments, the heat sink may be formed between the lower electrodes spaced apart from each other at a relatively short distance, so that the thermal disturbance between cells may be substantially reduced. Additionally, the heat sink may be electrically insulated and spaced apart from the phase change memory unit including the lower electrode, the phase change material layer pattern and the upper electrode, and thus an undesired conduction path may not be formed. Furthermore, the heat sink may be formed adjacent to the plug under the lower electrode, so that heat from the phase change memory unit may be easily transferred to the plug, thereby enhancing the absorption of heat.

Problems solved by technology

In order to solve the problem, a heat sink absorbing Joule heat has been developed, however, there is no efficient method of forming and / or arranging the heat sink.

Additionally, the heat sink may be electrically insulated and spaced apart from the phase change memory unit including the lower electrode, the phase change material layer pattern and the upper electrode, and thus an undesired conduction path may not be formed.

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