Method for adjusting height position of polishing head and method for polishing workpiece

Active Publication Date: 2014-01-30
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0022]According to the present invention, in adjustment of a height position of a polishing head in a polishing apparatus, the load torque current of the at least one of the polishing head and the turn table rotated is measured with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and the height position of the polishing head is recorded as a reference position when a variation in the measured load torque current exceeds a threshold, and the height position of the polishing head is adjusted to the predeterm

Problems solved by technology

In the case where this height position is not suitably adjusted, in the instance where the flatness of a workpiece to be polished may be degraded, and/or positions every polishing are not uniform, allowance in machining between workpieces to be polished may not become uniform so that unevenness of flatnesses takes place.
In

Method used

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  • Method for adjusting height position of polishing head and method for polishing workpiece
  • Method for adjusting height position of polishing head and method for polishing workpiece
  • Method for adjusting height position of polishing head and method for polishing workpiece

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EXAMPLE

[0056]The present invention will now be described more specifically with reference to an example according to the present invention and a comparative example, but the present invention is not limited to this example.

EXAMPLE

[0057]A workpiece was polished in accordance with a method for adjusting a height position of a polishing head and a method for polishing a workpiece of the present invention, and then the flatness thereof was evaluated.

[0058]A polishing apparatus as illustrated in FIG. 1 having a polishing head by the rubber-chuck method as illustrated in FIG. 2 was used to polish 100 silicon wafers each having a diameter of 300 mm. The maximum value, the minimum value, and the average value of the flatness, and variation in the flatness of each polished wafer were then evaluated. The flatness was evaluated by global backside ideal range (GBIR) within a region except for the outer circumferential part of 2 mm using Wafersight made by KLA Co. Ltd.

[0059]First, the height po...

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Abstract

A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position.

Description

TECHNICAL FIELD[0001]The present invention relates to a method for adjusting a height position of a polishing head for holding a workpiece, and a method for polishing a workpiece, in a polishing apparatus used in polishing the surface of a workpiece.BACKGROUND ART[0002]In accordance with high integration of semiconductor devices in recent years, requirements for flattening of semiconductor silicon wafers used therefore have been rigorous more and more. Moreover, in order to increase the yield of semiconductor chips, flatness up to a region in the vicinity of edges of a wafer is required.[0003]A desired shape of the silicon wafer is determined by mirror-polishing process which is the final process. Particularly, in the case of silicon wafers having a large diameter, e.g., a diameter of 300 mm, etc., primary polishing at double-side polishing process is performed in order to satisfy the specification of rigorous flatness thereafter to perform surface-secondary polishing process and th...

Claims

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Application Information

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IPC IPC(8): B24B37/005
CPCB24B37/005B24B37/042B24B37/105B24B37/30B24B49/10B24B49/12B24B49/16H01L21/02024B24B37/10H01L21/304
Inventor ARATANI, TAKASHI
Owner SHIN-ETSU HANDOTAI CO LTD
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