Method of fabricating a packaging substrate
a technology of packaging substrate and substrate layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical devices, etc., can solve the problems of increasing the overall height of the semiconductor package, increasing affecting the miniaturization of the semiconductor package. achieve the effect of reducing material and fabrication costs, facilitating the thinning of the circuit layer, and improving production efficiency
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first embodiment
[0028]FIGS. 2A to 2G are cross-sectional views showing a method of fabricating a packaging substrate 2 according to the present invention.
[0029]Referring to FIG. 2A, a carrier 2b having two carrying portions 20 bonded together is provided. Each of the carrying portions 20 has a first side 20a with a metal layer 200 and a second side 20b opposite to the first side 20a. The two carrying portions 20 are bonded through the second sides 20b.
[0030]In an embodiment, an adhesive layer 21 is formed in a non-circuit area at edges of the second sides 20b of the carrying portions 20 for bonding the two carrying portions 20. In particular, the adhesive layer 21 is formed at the outside of the circuit area A for bonding the two carrying portions 20. In other embodiments, the adhesive layer 21 can be formed on the entire surfaces of the second sides 20b of the carrying portions 20.
[0031]Referring to FIG. 2A′, each of the carrying portions 20 further has an insulating layer 201, a dielectric layer...
second embodiment
[0052]If the packaging substrate 3 of the second embodiment is used, since the preliminary metal layer 34a is laminated on the metal layer 300, the metal layer 300 can be directly separated from the circuit layer 34. Further, the surface treatment layer 35 on the metal layer 300 is removed.
[0053]Referring to FIG. 4C, a solder mask 28 is formed on the encapsulant 27 and the bottom surface of the circuit layer 24′, and a plurality of openings 280 are formed in the solder mask 28 for exposing a portion of the circuit layer 24′. The chip mounting area 240 can be partially exposed from the openings 280 to serve as a heat dissipating path for the chip 26.
[0054]Referring to FIG. 4D, a plurality of conductive elements 29 such as solder balls are formed on the exposed portion of the circuit layer 24, and a singulation process is performed along a cutting line S of FIG. 4C to obtain a plurality of semiconductor packages 2a, 2a′.
[0055]According to the present invention, since the carrying por...
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