Method and apparatus for controlled application of oersted field to magnetic memory structure

Abstract

An apparatus for applying Oersted fields to a magnetic memory device comprises a first metal layer; a first insulating layer positioned on the first metal layer; a magnetic shift register wire positioned on the first insulating layer; a second insulating layer positioned on the magnetic shift register wire; a second metal layer positioned on the second insulating layer; a first conducting wire positioned in the first metal layer and extending transverse to the magnetic shift register wire; and a second conducting wire positioned in the second metal layer and extending transverse to the magnetic shift register wire. The first conducting wire is offset relative to the second conducting wire, the offset being defined by a distance between a first axis normal to the magnetic shift register wire and through the first conducting wire and a second axis normal to the magnetic shift register wire and through the second conducting wire.

Description

BACKGROUND[0001]The exemplary embodiments of this invention relate generally to magnetic memory structures and, more particularly, to methods and apparatuses for applying Oersted fields to control the local magnetization of magnetic memory structures.[0002]Magnetic memory structures are devices that employ magnetic memory cells. Some magnetic memory cells (for example, magnetic random access memory (MRAM)) include a layer of magnetic film in which the magnetization can be altered and a reference layer of magnetic film in which the magnetization is fixed.[0003]In such devices, conducting wires are arranged in grid form and routed across pluralities of the memory cells arranged as an array. Each memory cell at the intersection of two conducting wires stores a piece of information as an orientation of a magnetization of that particular memory cell. External magnetic fields are applied to change the orientation of magnetization, thereby allowing the magnetization of each memory cell in ...

AI Technical Summary

Benefits of technology

The patent describes technical improvements for magnetic memory devices. The patent describes an apparatus that applies Oersted fields to a magnetic memory device, which includes a metal layer, insulating layers, and conducting wires. The first and second Oersted fields are offset from each other, which can be controlled by adjusting a distance between the first and second axes. The patent also describes methods for controlling the magnetic memory device using a nanowire and a conducting wire, with an offset between them. The technical effects of this patent include improving the performance and reliability of magnetic memory devices.

Problems solved by technology

However, many magnetic memory devices require large amounts of current flow to generate magnetic fields of suitable strength to affect the local magnetization in a memory cell.

Such large amounts of current may lead to the generation of excess heat as well as undesirable degradation in the performance of a device.

Additionally, larger amounts of current flow may result in large stray magnetic fields, which may undesirably affect the magnetization of neighboring memory cells.

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