Semiconductor device

Abstract

A semiconductor device 1 is provided with a semiconductor substrate 10, an electrode 30 formed on a surface of the semiconductor substrate 10, and an insulation film 20 formed on the electrode 30. The semiconductor device 1 includes a metal film 40 extending over a part of the surface of the electrode 30 not covered by the insulation film 20 and a surface of the insulation film 20. The semiconductor device 1 includes solder 80 formed on a surface of the metal film 40, a lead frame 50 joined to the metal film 40 by the solder 80, and sealing resin 60 sealing the insulation film 20, the metal film 40, and the solder 80. A convex 70 is formed on the surface of the insulation film 20. The metal film 40 covers the convex 70. The solder 80 covers the metal film 40 covering the convex 70.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to Japanese Patent Application No. 2014-118492 filed on Jun. 9, 2014, the contents of which are hereby incorporated by reference into the present application.TECHNICAL FIELD[0002]The present application relates to a semiconductor device.DESCRIPTION OF RELATED ART[0003]When current flows through and thus a temperature rises in a semiconductor device including a solder layer, a crack may occur in the solder layer due to stress. Japanese Patent Application Publication No. 2013-214561 (JP 2013-214561 A) discloses a technique of preventing the crack from occurring and developing in a solder layer in a semiconductor device. According to the technique disclosed in JP 2013-214561 A, the solder layer is composed of a solid-solubilized-hardening type solder material including Sn as a major component and solid-solubilized elements being solid-solubilized into this Sn.[0004]The technique disclosed in JP 2013-214561 A p...

AI Technical Summary

Benefits of technology

[0006]When current flows and thus a temperature rises in the semiconductor device including the sealing resin and the solder, a crack might occur at a boundary of the sealing resin and the solder, due to a difference between the sealing resin and the solder in thermal expansion coefficient. The crack that has occurred might develop toward an inner side and reach a boundary of the metal film and the insulation film. In an occurrence of such a crack, since the semiconductor device described above includes the insulation film having the convex protruding toward the metal film and the metal film covers the convex, the crack developing through the boundary of the metal film and the insulation film stops at the convex. This structure can prevent the crack from developing.

Problems solved by technology

When current flows and thus a temperature rises in the semiconductor device including the sealing resin and the solder, a crack might occur at a boundary of the sealing resin and the solder, due to a difference between the sealing resin and the solder in thermal expansion coefficient.

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