Smart refresh device

Abstract

A smart refresh device includes an address control block configured to determine whether a specific row address is a row hammer address, and invert a first row hammer address and perform an addition/subtraction of an address; a repair control block configured to determine whether the row hammer address is a repaired address and output a stored repair address as a second repair control signal; a repair address storage block configured to store an output address of the address control block and output a stored address as a latch address; a fuse block configured to output a repair signal representing information on a repair address to the repair control block, and output a decoding signal according to the latch address; and an operator configured to add and subtract the decoding signal according to an addition signal and a subtraction signal.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. §119(a) to Korean application number 10-2014-0127063, filed on Sep. 23, 2014, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]Various embodiments generally relate to a smart refresh device, and more particularly, to a technology for detecting a repair address and performing smart refresh, thereby improving a refresh characteristic.[0004]2. Related Art[0005]In general, a semiconductor memory device includes a number of memory cells. As processing technologies have been developed and thus the degree of integration is augmented, the number of memory cells gradually increases. If a fail occurs in even any one among memory cells, a corresponding semiconductor memory device misoperates. Therefore, since the semiconductor memory device including a failed cell cannot perform a desired operation, it ...

AI Technical Summary

Benefits of technology

[0010]In an embodiment, a smart refresh device may include an address control block configured to determine and store whether a specific row address is a row hammer address, and invert a first row hammer address and perform an addition/subtraction of an address. The smart refresh device may also include a repair control block configured to determine and store whether the row hammer address is a repaired address when a first smart refresh signal is activated, and output a stored repair address as a second repair control signal, when a second smart refresh signal is activated. The smart refresh device may also include a repair address storage block configured to store an output address of the address control block when the first smart refresh signal is activated, and output a stored address as a latch address when the second repair control signal is activated. The smart refresh device may also include a fuse block configured to output a repair signal representing information on a repair address to the repair control block, and output a decoding signal according

Problems solved by technology

If a fail occurs in even any one among memory cells, a corresponding semiconductor memory device misoperates.

In this regard, as the coupling effect between adjacent word lines increases as described above, a phenomenon occurs, in which the

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