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Very high aspect ratio contact

a contact and high aspect ratio technology, applied in the field of semiconductor devices in deep trenches, can solve the problems of increasing fabrication cost and complexity of semiconductor devices

Active Publication Date: 2016-05-26
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrical connection undesirably requires significant space and extra photolithographic process steps, both of which disadvantageously increase fabrication cost and complexity of the semiconductor device.

Method used

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  • Very high aspect ratio contact
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Embodiment Construction

[0009]The following co-pending patent applications are related and hereby incorporated by reference: U.S. patent application Ser. No. 14 / ______ (Texas Instruments docket number TI-72532), U.S. patent application 14 / ______ (Texas Instruments docket number TI-72572), and U.S. patent application 14 / ______ (Texas Instruments docket number TI-72683), all filed simultaneously with this application).

[0010]The present invention is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the invention. Several aspects of the invention are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide an understanding of the invention. One skilled in the relevant art, however, will readily recognize that the invention can be practiced without one or more of the specific details or with other methods. In oth...

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PUM

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Abstract

A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the deep trench. A contact opening is formed through the dielectric liner at the bottom of the deep trench to expose the substrate, leaving the dielectric liner on the sidewalls. Electrically conductive material is formed in the deep trench to provide the very high aspect ratio contact to the substrate through the contact opening.

Description

FIELD OF THE INVENTION[0001]This invention relates to the field of semiconductor devices. More particularly, this invention relates to deep trench structures in semiconductor devices.BACKGROUND OF THE INVENTION[0002]A semiconductor device has an electrical connection from a top surface to the substrate below a buried layer. The electrical connection undesirably requires significant space and extra photolithographic process steps, both of which disadvantageously increase fabrication cost and complexity of the semiconductor device.SUMMARY OF THE INVENTION[0003]The following presents a simplified summary in order to provide a basic understanding of one or more aspects of the invention. This summary is not an extensive overview of the invention, and is neither intended to identify key or critical elements of the invention, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the invention in a simplified form as a prelude to a mor...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/45H01L21/311H01L21/02H01L21/265H01L29/41H01L29/06
CPCH01L29/45H01L29/41H01L29/0684H01L29/0692H01L21/02271H01L21/02595H01L21/26513H01L21/31116H01L21/02164H01L21/02532H01L21/486H01L23/4824H01L21/763H01L21/743
Inventor ALI, ABBAS
Owner TEXAS INSTR INC