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Near-field terahertz imager

a terahertz imager and near-field technology, applied in the field of high-frequency imagers, can solve the problems of complex implementation of imagers, raise various problems, and the far-field terahertz imager is not adapted to obtaining an image resolution in the order of tenths of a micrometer

Active Publication Date: 2016-10-27
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The imager achieves a resolution in the order of tenths of a micrometer with a simplified design, capable of analyzing superficial layers of objects with varying dielectric constants, suitable for applications like detecting cancerous cells or analyzing liquids, while maintaining operational efficiency across a frequency range of 0.3 to 3 THz.

Problems solved by technology

However, this raises various problems.
Thus, a far-field terahertz imager is not adapted to obtaining an image having a resolution in the order of tenths of a micrometer.
However, these imagers are complex to implement, in particular due to the fact that they use terahertz emission sources such as coherent synchrotron radiations, and optical systems such as elliptical mirrors.

Method used

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Examples

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Embodiment Construction

[0029]The same elements have been designated by same references in the various figures and additionally the figures are not drawn to scale. In the following description, the terms “over” and “higher” refer to the orientations of the related elements in the corresponding figures. Unless stated otherwise, the expressions “about” and “in the order of” mean within 10%, or preferentially within 5%, of the stated value.

[0030]FIG. 5 is a schematic top view of an embodiment of a terahertz imager, only a portion of the imager being shown in this figure. The imager comprises a matrix 61 of pixels 63, three pixels of a column of the matrix 61 being shown in FIG. 5. Each pixel comprises an oscillator, for example such as disclosed in connection with FIGS. 3 and 4, a read circuit 65 and a transmission line 67. An end of the transmission line 67 is coupled to the node 41 of oscillator 33 and the other end is coupled to the read circuit 65. The read circuit of each pixel is adapted to provide a si...

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PUM

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Abstract

The present disclosure concerns a high frequency imager including a pixel matrix, each pixel including a high frequency oscillator, a transmission line positioned at a distance from an active surface of the imager smaller than the operating wavelength of the oscillator, a first end of the line being coupled to the oscillator, and a read circuit coupled to a second end of the line.

Description

BACKGROUND[0001]1. Technical Field[0002]The present disclosure relates to high frequency imagers, for example terahertz imagers, formed from a pixel matrix.[0003]2. Description of the Related Art[0004]Terahertz imagers are devices adapted to capture the image of a scene based on terahertz waves, i.e., waves having a frequency that is for example comprised between 0.3 and 3 THz. A conventional imager such as disclosed in the U.S. Patent Application Publication No. 2014 / 070103 of the applicant includes a terahertz waves emitter for illuminating a scene to be imaged, and a sensor made of a pixel matrix that receives terahertz waves from the scene. Terahertz imagers are used in a large number of applications in which it is wished to see through some materials of a scene. Indeed, terahertz waves penetrate a large number of dielectric materials and non-polar liquids, are absorbed by water and are almost entirely reflected by metals. Terahertz imagers are in particular used in security sca...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01J1/42G01J1/44H04N25/00
CPCG01J1/44G01J1/4228G01J1/42H03K3/0315
Inventor SHERRY, HANI
Owner STMICROELECTRONICS SRL